Datasheet > SD103ATW

SD103ATW

更新时间： 2024-11-30 14:54:15

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1423K
描述
SOT-363

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中文翻译

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数据手册

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SD103ATW 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Diodes

SD103ATW

SCHOTTKY BARRIER DIODE

SOT-363

FEATURES

Low Forward Voltage Drop

Guard Ring Construction for Transient Protection

Fast Switching

Low Leakage Current

MARKING: KLL

Solid dot = Pin1 indicator

KLL

Solid dot = Green molding compound device.

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

Limit

Unit

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

RMS Reverse Voltage

V_R(RMS)

I_FM

Forward Continuous Current

350

175

Average Rectified Current

I_O

Non-repetitive Peak Forward Surge Current@t=8.3ms

Power Dissipation

I_FSM

200

℃/W

℃

Thermal Resistance Junction to Ambient

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

500

-40 ~ +125

T_STG

-55 ~ +150

℃

Electrical Ratings @Ta=25℃

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

Reverse breakdown voltage

V _(BR)

I_R=100μA

I_F=20mA

I_F=100mA

0.37

0.50

Forward voltage

V_F

2.0

5.0

V_R=10V

Reverse current

I_R

C_T

t_rr

μA

V_R=30V

Capacitance between terminals

Reverse recovery time

V_R=0V,f=1.0MHz

I_F=I_R=200mA

Irr=0.1XI_R,R_L=100Ω

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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