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SD101BW

更新时间: 2024-10-01 06:10:35
品牌 Logo 应用领域
JINANJINGHENG 小信号肖特基二极管光电二极管IOT
页数 文件大小 规格书
1页 82K
描述
SMALL SIGNAL SCHOTTKY DIODES

SD101BW 数据手册

  
SD101AW THRU SD101CW  
SMALL SIGNAL SCHOTTKY DIODES  
S
E M I C O N D U C T O R  
FEATURES  
SOD-123  
For general purpose applications  
The SD10AW to SD101CW series is a Metal-on-silicon Schottky barrier device  
which is protected by a PN junction guard ring. The low forward voltage drop  
and fast switching make it ideal for protection of MOS devices, steering,  
biasing, and coupling diodes for fast switching and low logic level  
applications  
(
(
These diodes are also available in the Mini-MELF case with type  
designation LL101A to LL101C ,in the DO-35 case with type  
designation SD101A to SD101C and in the SOD-323 case with type  
designation SD103AWS to SW103CWS  
J
F
MECHANICAL DATA  
Case: SOD-123 plastic case  
Weight: Approx. 0.01 gram  
Dimensions in inches and (millimeters)  
ABSOLUTE RATINGS(LIMITING VALUES)  
Value  
Symbols  
Units  
Peak Reverse Voltage  
SD101AW  
SD101BW  
SD101CW  
VRRM  
VRRM  
VRRM  
60  
50  
40  
V
V
400 1)  
Porwer Dissipation (infinite Heat Sink)  
Maximum Single cycle surge 10ms square wave  
Junction temperature  
mW  
A
Ptot  
IFSM  
TJ  
2.0  
125  
C
Storage Temperature Range  
-55 to+150  
C
TSTG  
1) Valid provided that electrodes are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS  
(Ratings at 25 C ambient temperature unless otherwise specified)  
Max.  
Typ.  
Unis  
Symbols  
Min.  
VR  
VR  
VR  
SD101AW  
SD101BW  
SD101CW  
V
V
V
60  
50  
40  
Reverse breakover voltage  
at IR=10mA  
SD101AW  
SD101BW  
SD101CW  
Leakage current at VR=50V  
VR=40V  
VR=30V  
200  
200  
200  
nA  
nA  
nA  
IR  
IR  
IR  
0.41  
0.4  
0.39  
1
0.95  
0.9  
SD101AW  
SD101BQ  
SD101CW  
SD101AW  
SD101BW  
SD101CW  
VF  
VF  
VF  
VF  
VF  
VF  
Forward voltage drop at IF=1mA  
V
V
V
V
V
V
IF=15mA  
SD101AW  
SD101BW  
SD101CW  
pF  
pF  
pF  
CJ  
CJ  
CJ  
2.0  
2.1  
2.2  
Junction Capacitance at VR=0V ,f=1MHz  
trr  
1
ns  
Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR  
Thermal resistance,junction to Ambient  
300 1)  
K/W  
RqJA  
1) Valid provided that electrodes are kept at ambient temperature  
2-110  
NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096  
WWW.JIFUSEMICON.COM  
JINAN JINGHENG CO., LTD.  

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