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SD101B PDF预览

SD101B

更新时间: 2024-11-06 04:32:35
品牌 Logo 应用领域
德欧泰克 - DIOTEC 整流二极管
页数 文件大小 规格书
1页 45K
描述
Si-Schottky-Barrier Diodes

SD101B 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-35包装说明:ROHS COMPLIANT, GLASS PACKAGE-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.59Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:200 °C
最大输出电流:0.015 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260最大功率耗散:0.4 W
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:0.001 µs表面贴装:NO
技术:SCHOTTKY端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SD101B 数据手册

  
SD101A ... SD101C  
Version 2006-04-27  
SD101A ... SD101C  
Si-Schottky-Barrier Diodes  
Si-Schottky-Barrier Dioden  
Nominal current  
Nennstrom  
15 mA  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
40...60 V  
Ø 1.9  
Glass case  
Glasgehäuse  
DO-35  
SOD-27  
Weight approx.  
Gewicht ca.  
0.04g  
Equivalent SMD version  
Äquivalente SMD-Ausführung  
LL101A...LL101C  
Ø 0.52  
Standard packaging taped in ammo pack  
Standard Lieferform gegurtet in Ammo-Pack  
Dimensions - Maße [mm]  
Maximum ratings and characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
Forward voltage  
Durchlass-Spannung  
V
RRM [V]  
40  
VF [V] / IF = 1 mA  
VF [V] / IF = 15 mA  
SD101C  
SD101B  
SD101A  
< 0.39  
< 0.4  
< 0.9  
< 0.95  
< 1  
50  
60  
< 0.41  
Power dissipation  
Verlustleistung  
TA = 25°C  
TA = 25°C  
Ptot  
400 mW 1)  
Peak forward surge current, 10 µs square pulse  
Stoßstrom für einen 10 µs Rechteckimpuls  
IFSM  
2 A  
Leakage current, Tj = 25°C  
Sperrstrom  
SD101C  
SD101B  
SD101A  
VR = 30 V  
VR = 40 V  
VR = 50 V  
IR  
IR  
IR  
< 200 nA  
< 200 nA  
< 200 nA  
Junction Capacitance  
Sperrschichtkapazität  
VR = 0 V f = 1 MHz  
Cj  
< 2.2 pF  
Reverse recovery time  
Sperrverzugszeit  
IF = 5 mA through/über  
IR = 5 mA to IR = 0.5 mA  
trr  
typ. 1 ns  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
+200°C  
-55...+200°C  
Thermal Resistance Junction – Ambient air  
RthA  
<300 K/W 1)  
Wärmewiderstand Sperrschicht – umgebende Luft  
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case  
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

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