Datasheet > SD101AWS-T1-LF

SD101AWS-T1-LF

更新时间： 2024-11-06 21:11:59

品牌	Logo	应用领域
WTE		光电二极管
页数	文件大小	规格书
4页	60K
描述
Rectifier Diode, Schottky, 1 Element, 0.015A, 60V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

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SD101AWS-T1-LF 数据手册

WTE

POWER SEMICONDUCTORS

SD101AWS – SD101CWS

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

ꢀ

Low Turn-on Voltage

ꢀ

Fast Switching

PN Junction Guard Ring for Transient and

ESD Protection

Designed for Surface Mount Application

Plastic Material – UL Recognition Flammability

Classification 94V-O

SOD-323

Dim

Min

2.30

1.60

1.15

0.25

0.09

0.20

0.80

—

Max

2.75

1.80

1.35

0.40

0.18

0.40

1.00

0.12

ꢀ

Mechanical Data

ꢀ

Case: SOD-323, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

ꢀ

All Dimensions in mm

ꢀ

Polarity: Cathode Band

Weight: 0.004 grams (approx.)

Marking: Device Code, See Page 3

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Maximum Ratings @T_A=25°C unless otherwise specified

Characteristic

Symbol

SD101AWS

SD101BWS

SD101CWS

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

V^RWM

V^R

Forward Continuous Current (Note 1)

IFSM

2.0

Non-Repetitive Peak Forward Surge Current

Power Dissipation

@ t = 10µs

200

°C/W

°C

Typical Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

RθJA

Tj, TSTG

625

-65 to +125

Electrical Characteristics @T_A=25°C unless otherwise specified

Characteristic

Symbol

SD101AWS

SD101BWS

SD101CWS

Unit

@ I^F= 1.0mA

@ I^F= 15mA

0.41

1.00

0.40

0.95

0.39

0.90

Forward Voltage Drop

V^FM

Peak Reverse Leakage Current @ 80% DC Blocking Voltage

IRM

200

2.1

Total Junction Capacitance

@ V_R= 0V, f = 1.0MHz

2.0

2.2

I^F= IR = 50mA,

I^RR= 0.1 x IR, RL = 100Ω

Typical Reverse Recovery Time @

t^rr

1.0

Note: 1. Valid provided that terminals are kept at ambient temperature.

SD101AWS – SD101CWS

1 of 4

12 3 4

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