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SD101AWS-T1 PDF预览

SD101AWS-T1

更新时间: 2024-11-09 03:54:23
品牌 Logo 应用领域
WTE 整流二极管肖特基二极管光电二极管
页数 文件大小 规格书
4页 46K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

SD101AWS-T1 数据手册

 浏览型号SD101AWS-T1的Datasheet PDF文件第2页浏览型号SD101AWS-T1的Datasheet PDF文件第3页浏览型号SD101AWS-T1的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
Pb  
SD101AWS – SD101CWS  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
!
Low Turn-on Voltage  
!
!
Fast Switching  
PN Junction Guard Ring for Transient and  
ESD Protection  
Designed for Surface Mount Application  
Plastic Material – UL Recognition Flammability  
Classification 94V-O  
A
SOD-323  
Min  
Dim  
A
Max  
2.70  
1.95  
1.35  
0.35  
0.15  
0.95  
!
!
C
2.30  
D
B
1.75  
B
C
1.15  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
D
0.25  
E
G
E
0.05  
Mechanical Data  
G
0.70  
H
0.30  
!
!
Case: SOD-323, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
All Dimensions in mm  
!
!
!
Polarity: Cathode Band  
Weight: 0.004 grams (approx.)  
Marking: SD101AWS  
SD101BWS  
S2  
S3  
S4  
H
SD101CWS  
!
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
Maximum Ratings @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
SD101AWS  
SD101BWS  
SD101CWS  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
60  
50  
40  
V
Forward Continuous Current (Note 1)  
IF  
IFSM  
15  
2.0  
mA  
A
Non-Repetitive Peak Forward Surge Current  
Power Dissipation  
@ t = 10µs  
Pd  
200  
mW  
°C/W  
°C  
Typical Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
RJA  
Tj, TSTG  
625  
-65 to +125  
Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
SD101AWS  
SD101BWS  
SD101CWS  
Unit  
@ IF = 1.0mA  
@ IF = 15mA  
0.41  
1.00  
0.40  
0.95  
0.39  
0.90  
Forward Voltage Drop  
VFM  
V
Peak Reverse Leakage Current @ 80% DC Blocking Voltage  
IRM  
CT  
200  
2.1  
nA  
pF  
Total Junction Capacitance  
@ VR = 0V, f = 1.0MHz  
2.0  
2.2  
IF = IR = 50mA,  
IRR = 0.1 x IR, RL = 100  
Typical Reverse Recovery Time @  
trr  
1.0  
nS  
Note: 1. Valid provided that terminals are kept at ambient temperature.  
SD101AWS – SD101CWS  
1 of 4  
© 2006 Won-Top Electronics  

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