5秒后页面跳转
SD101AWS PDF预览

SD101AWS

更新时间: 2024-10-01 06:10:35
品牌 Logo 应用领域
JINANJINGHENG 小信号肖特基二极管光电二极管
页数 文件大小 规格书
1页 88K
描述
SMALL SIGNAL SCHOTTKY DIODES

SD101AWS 数据手册

  
SD101AWS THUR SD101CWS  
SMALL SIGNAL SCHOTTKY DIODES  
S
E M I C O N D U C T O R  
FEATURES  
SOD-323  
For general purpose applications  
The SD10AW to SD101CW series is a Metal-on-silicon Schottky barrier device  
which is protected by a PN junction guard ring. The low forward voltage drop  
and fast switching make it ideal for protection of MOS devices, steering,  
biasing, and coupling diodes for fast switching and low logic level  
applications  
1.7+0.1  
(
(
J
F
These diodes are also available in the Mini-MELF case with type  
designation LL101A to LL101C ,in the DO-35 case with type  
designation SD101A to SD101C and in the SOD-123 case with type  
designation SD101AW to SW101CW  
MECHANICAL DATA  
Case: SOD-323 plastic case  
Weight: Approx. 0.0040 gram  
Dimensions in inches and (millimeters)  
ABSOLUTE RATINGS(LIMITING VALUES)  
Value  
Symbols  
Units  
Peak Reverse Voltage  
SD101AWS  
SD101BWS  
SD101CWS  
VRRM  
VRRM  
VRRM  
60  
50  
40  
V
V
400 1)  
Power Dissipation (infinite Heat Sink)  
Maximum Single cycle surge 10ms square wave  
Junction temperature  
mW  
Ptot  
IFSM  
TJ  
2.0  
A
C
125  
Storage Temperature Range  
-55 to+150  
TSTG  
C
1) Valid provided that electrodes are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS  
(Ratings at 25 C ambient temperature unless otherwise specified)  
Max.  
Typ.  
Unis  
Symbols  
Min.  
VR  
VR  
VR  
SD101AWS  
SD101BWS  
SD101CWS  
V
V
V
60  
50  
40  
Reverse breakdown voltage  
at IR=10mA  
Leakage current at VR=50V  
VR=40V  
VR=30V  
SD101AWS  
SD101BWS  
SD101CWS  
200  
200  
200  
nA  
nA  
nA  
IR  
IR  
IR  
0.41  
0.4  
0.39  
1
0.95  
0.9  
SD101AWS  
SD101BWS  
SD101CWS  
SD101AWS  
SD101BWS  
SD101CWS  
VF  
VF  
VF  
VF  
VF  
VF  
Forward voltage drop at IF=1mA  
V
V
V
V
V
V
IF=15mA  
pF  
pF  
pF  
SD101AWS  
SD101BWS  
SD101CWS  
CJ  
CJ  
CJ  
2.0  
2.1  
2.2  
Junction Capacitance at VR=0V ,f=1MHz  
trr  
1
ns  
Reverse Recovery time at IF=IR=5mA,recover to 0.1 IR  
Thermal resistance,junction to Ambient  
650 1)  
C
/W  
RqJA  
1) Valid provided that electrodes are kept at ambient temperature  
2-111  
NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096  
WWW.JIFUSEMICON.COM  
JINAN JINGHENG CO., LTD.  

与SD101AWS相关器件

型号 品牌 获取价格 描述 数据表
SD101AWS, SD101BWS, SD101CWS VISHAY

获取价格

Small Signal Schottky Diodes
SD101AWS_1 DIODES

获取价格

SURFACE MOUNT SCHOTTKY BARRIER DIODE
SD101AWS_10 DIODES

获取价格

SURFACE MOUNT SCHOTTKY BARRIER DIODE
SD101AWS-7-F DIODES

获取价格

SURFACE MOUNT SCHOTTKY BARRIER DIODE
SD101AWS-E3-08 VISHAY

获取价格

Rectifier Diode, Schottky, 1 Element, 0.03A, 60V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
SD101AWS-G VISHAY

获取价格

For general purpose applications
SD101AWS-G, SD101BWS-G, SD101CWS-G VISHAY

获取价格

Small Signal Schottky Diodes
SD101AWS-G3-08 VISHAY

获取价格

DIODE SCHOTTKY 150MW 60V SOD323
SD101AWSHE3 MCC

获取价格

Tape : 3K/Reel, 120K/Ctn;
SD101AWS-HE3-18 VISHAY

获取价格

Rectifier Diode, Schottky, 1 Element, 0.03A, 60V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2