Datasheet > SD1006

SD1006

更新时间： 2022-11-26 04:14:11

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ASI		/
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描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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SD1006 数据手册

SD1006

NPN SILICON HIGH FREQUENCY TRANSISTOR

PACKAGE STYLE TO-39

DESCRIPTION:

The ASI SD1006 is a High Frequency

Transistor for General Purpose

Amplifier Applications.

MAXIMUM RATINGS

400 mA

30 V

I_C

V_CEO

V_CBO

P_DISS

T_J

50 V

3.5 W @ T_C= 25 °C

-65 °C to +200 °C

50 °C/W

T_STG

θ_JC

1 = EMITTER

2 = BASE

3 = COLLECTOR

NONE

CHARACTERISTICS T_C= 25 °C

SYMBOL

BV_CEO

BV_CBO

BV_EBO

I_CEO

TEST CONDITIONS

MINIMUM

TYPICAL MAXIMUM

UNITS

I_C= 5.0 mA

I_C= 100 µA

I_E= 100 µA

V_CE= 28 V

V_CE= 15 V

V_CB= 30 V

V_EB= 0.5 V

V_CE= 10 V

V_CE= 15 V

5.0

100

µA

---

h_FE

I_C= 50 mA

300

f_t

1500

1800

MHz

C_ob

f = 100 KHz

f = 2000 MHz

f = 216 MHz

2.5

8.0

2.7

7.0

7.2

-60

3.5

C_ib

NF_NB

NF_BB

G_VE

I_C= 10 mA

I_C= 50 mA

8.0

6.8

-57

-50

X_MOD

2_NDO

I_C= 50 mA P_out= +45 dbmV

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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