Datasheet > SD002BP50B

SD002BP50B

更新时间： 2024-10-04 18:06:27

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
3页	179K
描述
SILICON BYPASS DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SD002BP50B 数据手册

SD002BP50B

SD002BP50B-R

SENSITRON

SEMICONDUCTOR

SILICON BYPASS DIODE

PRELIMINARY TECHNICAL DATA

DATASHEET 5567, PRELIMINARY.1

SILICON BYPASS DIODE

APPLICATIONS:

This series of diodes are intended to be used as solar cell bypass diodes to provide protection for the string in

the event of a failure of one of the cells in the string. The triangular shape and weld able surfaces allow for

easy integration with the solar cells with rugged attachment. The devices are intended for use in terrestrial

solar arrays as well as in space based solar arrays for telecommunications, scientific or defense satellites,

space stations and scientific exploration missions.

FEATURES / BENEFITS:



Triangular shape for integration with chamfered corners of solar cells

Low forward voltage drop

Low reverse leakage

Silicon Die fabricated on a MIL-PRF-19500 JANS qualified manufacturing line

Available with Class H or Class K element evaluation IAW MIL-PRF-19500

All ratings are @ T_A= 25 °C unless otherwise specified

ELECTRICAL CHARACTERISTICS:

Maximum Ratings:

Characteristics

Symbol

Condition

Min.

Max.

Units

Peak Inverse Voltage

V_RWM

Breakdown Voltage

V_BR1

I_F(AV)

@ I_BR=100uA

@ 55C ⁽¹⁾

Max. Average Forward

Current

5.0

Max. Peak One Cycle Non-

Repetitive Surge Current

Max. Storage and Junction

Temperature

I_FSM

T_J

8.3 ms, sine pulse ⁽¹⁾

-55

+175

0.03

C

Maximum Weight

grams

⁽¹⁾When mounted on suitable PCB

Electrical Characteristics:

Characteristics

Max. Forward Voltage Drop

Symbol

V_F1

Condition

Max.

0.80

0.82

0.16

1.0

Units

1.0A, pulse, T_J= 25 C

2.0A, pulse, T_J= 25 C

1A, pulse, T_J= 125 C

V_F2

V_F3

V_F4

1A, pulse, T_J= -55 C

Max. Reverse Current

I_R1

I_R2

C_T

1.0

2.5

500

V_R= V_RWM, pulse, T_J= 25 C

V_R= V_RWM, pulse, T_J= 125 C

V_R= 5V, T_C= 25 C

f_SIG= 1MHz,

A

Max. Junction Capacitance

V_SIG= 50mV (p-p)

PHONE (631) 586-7600 FAX (631) 242-9798  www.sensitron.com  sales@sensitron.com

12 3

中文翻译

下载PDF

与SD002BP50B相关器件

型号	品牌	获取价格	描述	数据表
SD002BP50B-R	SENSITRON	获取价格	SILICON BYPASS DIODE
SD004-11-41-211	ADVANCEDPHOTONIX	获取价格	InGaAs Photodetectors
SD0052	SUMIDA	获取价格	ADSL Transformer< SMD Type: CEP Series>
SD0060CN02270T	APITECH	获取价格	SAW Filter, 1 Function(s), 60MHz,
SD0060CN02270T	IDT	获取价格	SAW Filter, 1 Function(s), 60MHz, ROHS COMPLIANT, DIP-14/6
SD006M0068B2S-0511	YAGEO	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 6.3V, 20% +Tol, 20% -Tol, 68uF
SD006M0150BZF-0611	YAGEO	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 6.3V, 20% +Tol, 20% -Tol, 150u
SD006M0470A3F-0811	YAGEO	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 6.3V, 20% +Tol, 20% -Tol, 470u
SD006M0470A3S-0811	YAGEO	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 6.3V, 20% +Tol, 20% -Tol, 470u
SD006M0680B5F-1012	YAGEO	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 6.3V, 20% +Tol, 20% -Tol, 680u

与SD002BP50B相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

39
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

33
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

30
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

42

产品中心

服务支持

精选活动

关于我们

帮助中心

SD002BP50B

SD002BP50B 数据手册

与SD002BP50B相关器件

与SD002BP50B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SD002BP50B

SD002BP50B 数据手册

与SD002BP50B相关器件

与SD002BP50B相关文章

您还可以找

您在本页遇到什么问题？