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SCS202PF PDF预览

SCS202PF

更新时间: 2024-09-25 06:10:31
品牌 Logo 应用领域
SECOS 二极管开关
页数 文件大小 规格书
3页 378K
描述
Dual Series Chips Surface Mount Switching Diode

SCS202PF 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
Base Number Matches:1

SCS202PF 数据手册

 浏览型号SCS202PF的Datasheet PDF文件第2页浏览型号SCS202PF的Datasheet PDF文件第3页 
SCS202PF  
Dual Series Chips  
Elektronische Bauelemente  
Surface Mount Switching Diode  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
Application  
Ultra high speed switching  
3
A
L
1
2
SC-70  
Features  
3
S
Top View  
B
SOT-323  
Four types of packaging are available.  
1
2
High speed. (trr=1.5ns Typ.)  
Suitable for high packing density layout.  
High reliability.  
V
G
CATHODE  
1
ANODE  
3
2
C
CATHODE  
H
Construction  
Marking code: P, MO  
J
D
K
Silicon epitaxial planar  
SOT-323(SC-70)  
Dim  
Min  
Max  
MAXIMUM RATINGS (EACH DIODE)  
Rating  
A
B
C
D
G
H
J
1.800 2.200  
1.150 1.350  
0.800 1.000  
0.300 0.400  
1.200 1.400  
0.000 0.100  
0.100 0.250  
0.350 0.500  
0.590 0.720  
2.000 2.400  
0.280 0.420  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Peak reverse voltage  
DC reverse voltage  
V
RM (V)  
V
80  
R (V)  
Peak forward current  
I
300  
mAdc  
FM (mA)  
I
Mean rectifying current  
Surge current  
100  
4
o (mA)  
mW  
mW  
I
surge (A)  
K
L
Power dissipation (TOTAL)  
Junction temperature  
Storage temperature  
P / N Type  
P
200  
150  
d (mW)  
T
j(ºC)  
ºC  
ºC  
S
V
T
-55~+155  
stg(ºC)  
N
All Dimension in mm  
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) (EACH DIODE)  
Characteristic  
Symbol  
Min  
Max  
Unit  
Forward voltage  
V
F (V)  
1.2  
Vdc  
(I  
= 100)  
F
Reverse current  
I
0.1  
3.5  
µAdc  
R
(I  
= 70uA)  
R
Capacitance between terminals  
C
mVdc  
T(pF)  
(V = 6, f = 1.0 MHz)  
R
Reverse recovery time  
(V = 6, f = 5.0 MHz)  
R
4
t
rr(ns)  
1. FR5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 3  

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