Datasheet > SCH4C60S

SCH4C60S

更新时间： 2024-11-25 06:10:31

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描述
Silicon Controlled Rectifiers

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SCH4C60S 数据手册

SCH4C60S

Silicon Controlled Rectifiers

Features

◆

Repetitive Peak Off-State Voltage : 600V

R.M.S On-State Current ( IT(RMS)= 4 A )

Low On-State Voltage (1.6V(Typ.) @ I_TM)

General Description

Sensitive gate triggering SCR is suitable for the application

where requiring high bidirectional blocking voltage capability

and also suitable for over voltage protection ,motor control circuit

in power tool, inrush current limit circuit and heating control

system.

TO202-3

Absolute Maximum Ratings (T_J= 25°C unless otherwise specified)

Symbol

Parameter

Condition

Ratings

Units

Repetitive Peak Off-State Voltage

V_DRM

600

T_i=60 °C

Average On-State Current(180°

Conduction Angle)

1.35

0.9

I_T(AV)

Tamb=25 °C

T_i=60 °C

R.M.S On-State Current(180°

Conduction Angle)

I_T(RMS)

Tamb=25 °C

1.35

1/2 Cycle, 60Hz, Sine

Wave

Non-Repetitive

Surge On-State Current

I_TSM

I²t

4.5

A²s

A/㎲

I²t for Fusing

t =10ms

F=60Hz,Tj=125 °C

Critical rate of rise of on-state current

Forward Peak Gate Power Dissipation

di/dt

P_GM

0.5

Forward Average Gate Power

Dissipation

Tj=125 °C

P_G(AV)

0.2

Forward Peak Gate Current

Operating Junction Temperature

Storage Temperature

I_FGM

T_J

1.2A

°C

-40-125 °C

-40-150 °C

T_STG

Thermal Characteristics

Symbol

Parameter

Value

Units

R_θJc

R_θJA

Thermal Resistance Junction to Case(DC)

Thermal Resistance Junction to Ambient(DC)

℃/W

100

℃/W

Jan 2009. Rev. 0

1/5

12 3 4 5

中文翻译

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