Datasheet > SCH1332-TL-W

SCH1332-TL-W

更新时间： 2024-09-17 21:13:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	665K
描述
Power MOSFET, -20V, 95mΩ, -2.5A, Single P-Channel, 5000-REEL

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中文翻译

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技术参数
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SCH1332-TL-W 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	not_compliant
Factory Lead Time：	1 week	风险等级：	7.94
JESD-609代码：	e6	湿度敏感等级：	1
端子面层：	Tin/Bismuth (Sn/Bi)	Base Number Matches：	1

SCH1332-TL-W 数据手册

SCH1332

Power MOSFET

–20V, 95mΩ, –2.5A, Single P-Channel

This low-profile high-power MOSFET is produced using ON

Semiconductor’s trench technology, which is specifically designed to

minimize gate charge and ultra low on resistance. This device is suitable for

applications with low gate charge driving or ultra low on resistance

requirements.

www.onsemi.com

Features

• Low On-Resistance

(on) Max

D Max

DSS

• High Speed Switching

• 1.8V drive

• Pb-Free, Halogen Free and RoHS compliance

• Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)

95mΩ@ −4.5V

138mΩ@ −2.5V

215mΩ@ −1.8V

−20V

−2.5A

ELECTRICAL CONNECTION

P-Channel

Typical Applications

• DC/DC Converter

1, 2, 5, 6

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Symbol

Value

Unit

−20

DSS

GSS

−2.5

Drain Current (Pulse)

−10

PW ≤ 10μs, duty cycle ≤ 1%

Power Dissipation

PACKING TYPE : TL

MARKING

When mounted on ceramic substrate

(900mm²

× 0.8mm)

Junction Temperature

150

°C

Storage Temperature

Tstg

−55 to +150

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

2 : This product is designed to “ESD immunity<200V*”, so please take care when

handling.

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

*Machine Model

THERMAL RESISTANCE RATINGS

Parameter

Junction to Ambient

When mounted on ceramic substrate

(900mm²

0.8mm)

Symbol

Value

Unit

θJA

125

°C/W

August 2015 - Rev. 2

Publication Order Number :

SCH1332/D

12 3 4 5

中文翻译

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与SCH1332-TL-W相关器件

型号	品牌	获取价格	描述	数据表
SCH1333	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device Applications
SCH1333_12	SANYO	获取价格	General-Purpose Switching Device Applications
SCH1333-TL-H	ONSEMI	获取价格	P-Channel Power MOSFET, -20V, -2A, 130mΩ, Single SCH6, SOT-563 / SCH6, 5000-REEL
SCH1334	SANYO	获取价格	General-Purpose Switching Device Applications
SCH1334-TL-H	ONSEMI	获取价格	P-Channel Power MOSFET, -12V, -1.6A, 215mΩ, Single SCH6, SOT-563 / SCH6, 5000-RE
SCH1335	SANYO	获取价格	General-Purpose Switching Device Applications
SCH1335-TL-H	ONSEMI	获取价格	P-Channel Power MOSFET, -12V, -2.5A, 112mΩ, Single SCH6, SOT-563 / SCH6, 5000-RE
SCH1337	SANYO	获取价格	General-Purpose Switching Device Applications
SCH1337	ONSEMI	获取价格	Single P-Channel Power MOSFET
SCH1337-TL-H	ONSEMI	获取价格	Single P-Channel Power MOSFET

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