Datasheet > SCG4153

SCG4153

更新时间： 2024-09-27 01:21:55

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	683K
描述
N-Channel Enhancement Mode MOSFET

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SCG4153 数据手册

SCG4153

0.8A , 20V , R_DS(ON)310 mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SOT-523

These miniature surface mount MOSFETs utilize a high

cell density trench process to provide low R_DS(on)and to

ensure minimal power loss and heat dissipation.

Top View

C B

MECHANICAL DATA

ꢀ

Trench Technology

Supper high density cell design

Excellent ON resistance

Extremely Low Threshold Voltage

Millimeter

Min. Max.

APPLICATION

REF.

Min.

Max.

1.5

1.45

0.7

1.7

1.75

0.9

0.1

ꢀ

DC-DC converter circuit

Load Switch

0.55 REF.

ꢀ

0.1

0.2

0.7

0.9

1.1

0.5 TYP.

0.25 0.325

0.15

0.35

MARKING

Top View

N3^ꢀ

ꢀ

= Date Code

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-523

7 inch

MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter Symbol

Rating

Unit

10S

Steady State

Drain – Source Voltage

V_DS

V_GS

±6

Gate – Source Voltage

T_A= 25°C

T_A= 70°C

T_A= 25°C

T_A= 70°C

T_A= 25°C

T_A= 70°C

T_A= 25°C

T_A= 70°C

0.88

0.71

0.37

0.23

0.76

0.6

0.8

Continuous Drain Current ¹

I_D

P_D

I_D

0.64

0.3

Power Dissipation ¹

0.19

0.69

0.55

0.22

0.14

Continuous Drain Current ²

Power Dissipation ²

0.27

0.17

P_D

Pulsed Drain Current ³

Lead Temperature

I_DM

T_L

1.4

°C

260

Operating Junction & Storage Temperature Range

T_J, T_STG

150, -55~150

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

12-Mar-2013 Rev. A

Page 1 of 4

12 3 4

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