Datasheet > SCA-3

SCA-3

更新时间： 2024-09-23 22:22:15

品牌	Logo	应用领域
STANFORD		放大器
页数	文件大小	规格书
6页	556K
描述
DC-5 GHZ CASCADABLE GAAS HBT MMIC AMPLIFIER

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Preliminary

Product Description

SCA-3

Stanford Microdevices SCA-3 is a high performance Gallium

Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A

Darlington configuration is utilized for broadband performance

up to 5GHz. The heterojunction increases breakdown voltage

and minimizes leakage current between junctions. Cancellation

of emitter junction non-linearities results in higher suppression of

intermodulation products. Typical IP3 at 850 MHz with 65mA is

32.8 dBm.

DC-5 GHz, Cascadable

GaAs HBT MMIC Amplifier

NGA-489 Recommended for New Designs

These unconditionally stable amplifiers provide 13.7 dB of gain

and 17.3 dBm of 1dB compressed power and require only a

single positive voltage supply. Only 2 DC-blocking capacitors,

a bias resistor and an optional inductor are needed for

operation. This MMIC is an ideal choice for wireless applica-

tions such as cellular, PCS, CDPD, wireless data and SONET.

Product Features

Small Signal Gain vs. Frequency @ I_D=65mA

High Output IP3: 32.8 dBm @ 850 MHz

Cascadable 50 Ohm Gain Block

Patented GaAs HBT Technology

Operates From Single Supply

Applications

Cellular, PCS, CDPD, Wireless Data, SONET

Frequency (GHz)

Electrical Specifications

Parameters: Test Conditions:

Z₀= 50 Ohms, I_D= 65mA, T = 25°C

Symbol

Units

Min.

Typ.

Max.

GHz

f = 850 MHz

f = 1950 MHz

f = 2400 MHz

dBm

17.3

17.6

17.4

Output Power at 1dB Compression

P_1dB

f = 850 MHz

f = 1950 MHz

f = 2400 MHz

dBm

29.8

12.3

32.8

30.3

29.1

Third Order Intercept Point

Power out per tone = 0 dBm

IP₃

f = 850 MHz

f = 1950 MHz

f = 2400 MHz

13.7

13.6

Small Signal Gain

S₂₁

Bandwidth (Determined by S₁₁, S₂₂Values)

MHz

5000

1.7:1

1.5:1

S₁₁

S₂₂

Input VSWR

f = DC-5000 MHz

Output VSWR

f = 850 MHz

f = 1950 MHz

f = 2400 MHz

18.3

18.4

Reverse Isolation

S₁₂

Noise Figure, Z_S= 50 Ohms

Device Voltage

f = 1950 MHz

5.6

4.9

224

4.4

5.4

V_D

Rth,j-l

Thermal Resistance (junction - lead)

^oC/W

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change

without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford

Microdevices product for use in life-support devices and/or systems.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

EDS-101392 Rev A

12 3 4 5 6

中文翻译

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