Datasheet > SC2344

SC2344

更新时间： 2024-09-30 23:33:31

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SC2344 数据手册

Ordering number:EN544G

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1011/2SC2344

High-Voltage Switching, AF Power Amp,

100W Output Predriver Applications

Package Dimensions

unit:mm

2010C

[2SA1011/2SC2344]

JEDEC : TO-220AB

EIAJ : TO-SC-46

1 : Base

( ) : 2SA1011

2 : Collector

3 : Emitter

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

(–)180

(–)160

(–)6

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

(–)1.5

(–)3

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

˚C

Tc=25˚C

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=(–)120V, I =0

(–)10

200*

µA

CBO

Emitter Cutoff Current

DC Current Gain

=(–)4V, I =0

=(–)5V, I =(–)300mA

EBO

60*

Gain-Bandwidth Product

Output Capacitance

=(–)10V, I =(–)50mA

100

MHz

=(–)10V, f=1MHz

(30)

Base-to-Emitter Voltage

=(–)5V, I =(–)10mA

(–)1.5

(–0.5)

0.3

CE(sat)

Collector-to-Emitter Saturation Voltage

=(–)500mA, I =(–)50mA

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-ON Time

=(–)1mA, I =0

(–)180

(–)160

(–)6

(BR)CBO

(BR)CEO

(BR)EBO

=(–)1mA, R =∞

I =(–)10mA, I =0

See specified Test Circuit

(0.29)

0.15

µs

Fall Time

(0.19)

0.48

µs

Storage Time

(0.48)

0.81

stg

* : The 2SA1011/2SC2344 are classified by 300mA h as follows :

120 100

200

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598HA (KT)/30196TS APS 8-3288/D251MH/3207AT/2265MY, TS No.544-1/3

12 3

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