Datasheet > SBT101CM

SBT101CM

更新时间： 2024-10-02 05:58:59

品牌	Logo	应用领域
MINI		/
页数	文件大小	规格书
3页	45K
描述
Rectifier Diode,

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技术参数
数据手册

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SBT101CM 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

SBT101CM 数据手册

Silicon-BasedTechnology Corp.

Small-Signal Schottky Barrier Diodes

SBT101M Series

SBT101M series are Schottky Barrier Diodes fabricated by a series of

proprietary Schottky barrier patents and technologies (SBT^®) developed by

Silicon-Based Technology Corporation, which exhibit high-performance

characteristics for modern switching, conversion and protection applications with

high speed and low power consumptions. The package types as described in this

data sheet are set forth in routine production; other packages are available upon

special orders.

ꢀ Features and Advantages:

ꢁ Low forward voltage drop(V_F)

ꢁ Low reverse leakage current (I_R)

ꢁ Very small conduction power loss

ꢁ Very small switching power loss

ꢁ Very high switching speed

ꢁ Very high reliability

Electrical Characteristics :

ꢀ

(@T_A=25°C unless otherwise specified)

Characteristic

Symbol

Min.

Max.

Unit

Test Conditions

SBT101AM

SBT101BM

SBT101CM

Reverse

Breakdown

Voltage (Note 3)

V_(BR)R

I_R=10ꢀA

0.30

0.28

0.60

0.55

I_F=1.0mA

I_F=15mA

V_R=50V

SBT101AM

SBT101BM

SBT101CM

SBT101AM

SBT101BM

SBT101CM

SBT101AM

Forward

V_F

Voltage Drop

Peak Reverse

200

SBT101BM

I_RM

V_R=40V

V_R=30V

Current (Note 2)

SBT101CM

SBT101AM

SBT101BM

SBT101CM

2.0

2.1

2.2

Total

C_T

t_rr

V_R=0V, f=1.0MH_Z

Capacitance

I_F=I_R=5.0mA,

I_rr=0.1ꢀI_R,R_L=100ꢁ

Reverse Recovery Time

1.0

Silicon-Based Technology Corporation

1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C

Tel 886-3-5777897

Fax 886-3-5779832

12 3

中文翻译

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