Datasheet > SBRF30100C

SBRF30100C

更新时间： 2024-11-19 18:09:55

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科信 - KEXIN		/
页数	文件大小	规格书
2页	674K
描述
Schottky Diodes

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数据手册

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SBRF30100C 数据手册

DIP Type

Diodes

Schottky Diodes

SBRF30100C

Unit:mm

TO-220AB

4.83 (max)

4.07 (min)

10.53(max)

9.66 (min)

1.39 (max)

1.15 (min)

■ Features

● Common cathode structure

● Low power loss, high efficiency

● High Operating Junction Temperature

2.79 (max)

2.04 (min)

1.52 (max)

1.15 (min)

● Guard ring for overvoltage protection，High reliability

● RoHS product

0.61 (max)

0.36 (min)

0.96 (max)

0.64 (min)

5.33 (max)

4.83 (min)

2.66 (max)

2.42 (min)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Repetitive Peak Reverse Voltage

Maximum DC Blocking Voltage

Symbol

Rating

100

Unit

RRM

100

Per Device

Per Diode

Average Forward Current

IFAV

Surge Non-Repetitive Forward Current

Thermal Resistance Junction to Case

Junction Temperature

FSM

275

θJC

1.8

℃/W

175

℃

Storage Temperature range

stg

-40 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

R= 100 uA

Min

100

Typ

Max Unit

Reverse breakdown voltage

0.9

0.75

= 15A , T

= 25℃

= 125℃

Forward voltage

=VRRM , T

=V^RRM, T

=25℃

Reverse voltage leakage current

=125℃

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