是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-5 |
包装说明: | O-MUPM-D1 | 针数: | 1 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.54 |
Is Samacsys: | N | 其他特性: | LOW FORWARD VOLTAGE |
应用: | GENERAL PURPOSE | 外壳连接: | ANODE |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 0.38 V |
JEDEC-95代码: | DO-203AB | JESD-30 代码: | O-MUPM-D1 |
JESD-609代码: | e0 | 最大非重复峰值正向电流: | 1200 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 1 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 最大输出电流: | 80 A |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 10 V |
子类别: | Rectifier Diodes | 表面贴装: | NO |
技术: | SCHOTTKY | 端子面层: | TIN LEAD |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SBR8210RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 80A, 10V V(RRM), Silicon, DO-203AB, DO-5, 1 | |
SBR8215 | MICROSEMI |
获取价格 |
Schottky ORing Diode | |
SBR8215E3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 80A, 15V V(RRM), Silicon, DO-203AB, DO-5, 1 | |
SBR8215R | MICROSEMI |
获取价格 |
80 Amp Schottky Rectifier | |
SBR8215RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 80A, 15V V(RRM), Silicon, DO-203AB, DO-5, 1 | |
SBR830 | DAESAN |
获取价格 |
CURRENT 8.0 AMPERES | |
SBR830 | DIODES |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 30V V(RRM), Silicon, | |
SBR830(TUBE) | DIODES |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 30V V(RRM), Silicon, | |
SBR830{TUBE} | DIODES |
获取价格 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 30V V(RRM), Silicon | |
SBR835 | ADPOW |
获取价格 |
Rectifier Diode, Schottky, 1 Element, 8A, 35V V(RRM) |