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SBR13003D PDF预览

SBR13003D

更新时间: 2024-11-06 06:10:11
品牌 Logo 应用领域
稳先微 - WINSEMI 晶体开关晶体管高压
页数 文件大小 规格书
5页 404K
描述
High Voltage Fast-Switching NPN Power Transistor

SBR13003D 数据手册

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SBR13003D  
High Voltage Fast-Switching NPN Power Transistor  
Features  
Very High Switching Speed  
High Voltage Capability  
Wide Reverse Bias SOA  
Built-in freewheeling diode  
General Description  
This Device is designed for high voltage, High speed  
switching characteristics required such as lighting system,  
switching mode power supply.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Test Conditions  
VBE = 0  
Value  
Units  
VCES  
Collector-Emitter Voltage  
700  
V
VCEO  
Collector-Emitter Voltage  
400  
V
IB = 0  
IC = 0  
VEBO  
IC  
ICP  
IB  
Emitter-Base Voltage  
Collector Current  
9.0  
1.5  
3.0  
0.75  
1.5  
40  
V
A
A
A
A
Collector pulse Current  
Base Current  
IBM  
Base Peak Current  
tP = 5ms  
Total Dissipation at Tc = 25  
Total Dissipation at Ta = 25℃  
PC  
W
1.2  
TJ  
Operation Junction Temperature  
Storage Temperature  
- 40 ~ 150  
- 40 ~ 150  
TSTG  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
RθJc  
RθJA  
Thermal Resistance Junction to Case  
Thermal Resistance Junction to Ambient  
3.12  
/W  
89  
/W  
Jan 2009. Rev. 0  
1/5  
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.  

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