Datasheet > SBR13003B

SBR13003B

更新时间： 2024-11-06 09:34:11

品牌	Logo	应用领域
稳先微 - WINSEMI		晶体晶体管高压
页数	文件大小	规格书
5页	413K
描述
High Voltage Fast -Switching NPN Power Transistor

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SBR13003B 数据手册

SBR13003B

High Voltage Fast -Switching NPN Power Transistor

Features

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Very High Switching Speed

High Voltage Capability

Wide Reverse Bias SOA

General Description

This Device is designed for high voltage, High speed

switching characteristics required such as lighting

system,switching mode power supply.

Absolute Maximum Ratings

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Test Conditions

Value

700

Units

Collector -Emitter Voltage

Collector -Emitter voltage

Emitter-Bade Voltage

Collector Current

V_BE=0

I_B=0

400

I_C=0

9.0

1.5

I_CP

Collector pulse Current

Base Current

3.0

I_B

0.75

1.5

I_BM

Base Peak Current

t_P=5ms

P_C

Total dissipation at Tc=25℃

Operation Junction Temperature

Storage Temperature

℃

T_J

-40~150

T_STG

Thermal Characteristics

Symbol

Parameter

Value

4.16

Units

℃/W

R_ӨJC

Thermal Resistance Junction to Case

R_ӨJA

Thermal Resistance Junction to Ambient

Rev.A Aug.2010

12 3 4 5

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