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SBR0530S3 PDF预览

SBR0530S3

更新时间: 2024-11-27 21:05:55
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
2页 48K
描述
Rectifier Diode, 1 Element, 0.5A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2

SBR0530S3 技术参数

生命周期:Obsolete包装说明:R-PDSO-G2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.84配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G2元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大重复峰值反向电压:30 V表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

SBR0530S3 数据手册

 浏览型号SBR0530S3的Datasheet PDF文件第2页 
SBR0530S3 - Prel  
SBR0530S5 - Prel  
Using state-of-the-art SBR IC process technology,  
the following features are made possible in a single device:  
Major ratings and characteristics  
Characteristics  
Values  
Units  
A
IF(AV) Rectangular Waveform  
0.5  
VRRM  
30  
V
VF@0.5A, TJ=75oC  
0.43  
V, typ  
oC  
TJ (operating/storage)  
-65 to 125  
ELECTRICAL:  
MECHANICAL:  
* Low Forward Voltage Drop  
* Molded Plastic SOD-323, SOD-523 packages  
* Reliable High Temperature Operation  
* Super Barrier Design  
* Softest, fast switching capability  
* 125oC Operating Junction Temperature  
SBR0530S3  
SBR0530S5  
Cathode Mark  
A
B
A
B
SOD-323  
SOD-523  
Di  
A
B
C
D
E
Min  
2.30  
1.60  
0.25  
1.15  
0.10  
0.85  
-
Max  
2.70  
1.80  
0.40  
1.45  
0.18  
1.05  
0.10  
0.40  
Di  
A
B
C
D
E
Min  
1.60  
0.8  
Max  
1.80  
1.0  
C
D
C
0.70  
0.85  
G
D
0.35 (typ)  
0.30 (typ)  
0.70 (typ)  
F
H
F
G
H
0.20  
All Dimensions in mm  
E
All Dimensions in mm  
F
E
F
SOD-323  
SOD-523  
___________________________________________________________________________________________________  
www.apdsemi.com Version 0.0 - Preliminary, April 2006  
1

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