Datasheet > SBP5307D-O

SBP5307D-O

更新时间： 2024-11-24 12:46:55

品牌	Logo	应用领域
SEMIWELL		晶体开关晶体管高压
页数	文件大小	规格书
4页	126K
描述
High Voltage Fast Switching NPN Power Transistor

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SBP5307D-O 数据手册

SemiWell Semiconductor

SBP5307D-O

Symbol

High Voltage Fast Switching NPN

Power Transistor

Features

◆ Very High Switching Speed

◆ Minimum lot to lot h_FEVariation

◆ Wide Reverse Bias SOA

General Description

This Device is designed for high voltage, High speed

switching characteristics required such as lighting system,

switching mode power supply.

Absolute Maximum Ratings (T_J= 25℃ unless otherwise specified)

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Condition

Value

700

Units

V_BE= 0

I_B= 0

400

I_C= 0

9.0

8.0

I_CP

Collector pulse Current

Base Current

16.0

I_B

4.0

I_BM

Base Peak Current

t_P= 5ms

8.0

P_C

Total Dissipation at TC = 25℃

Operation Junction Temperature

Storage Temperture

℃

T_J

- 40 ~ 150

T_STG

Thermal Characteristics

Symbol

Ratings

1.67

Parameter

Unit

℃/W

R_θJC

R_θJA

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

62.5

Oct 2008. Rev. 0

1/4

12 3 4

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