Datasheet > SBP5027-R

SBP5027-R

更新时间： 2024-11-24 06:10:11

品牌	Logo	应用领域
稳先微 - WINSEMI		晶体开关晶体管高压
页数	文件大小	规格书
5页	411K
描述
High Voltage Fast-Switching NPN Power Transistor

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中文翻译

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SBP5027-R 数据手册

SBP5027-R

High Voltage Fast-Switching NPN Power Transistor

Features

◆ Very High Switching Speed

◆ High Voltage Capability

◆ Wide Reverse Bias SOA

General Description

This Device is designed for high voltage, High speed

switching characteristics required such as lighting system,

switching mode power supply.

Absolute Maximum Ratings

Symbol

Parameter

Test Conditions

V_BE= 0

Value

Units

V_CES

Collector-Emitter Voltage

1100

V_CEO

Collector-Emitter Voltage

800

I_B= 0

I_C= 0

V_EBO

I_C

I_CP

I_B

Emitter-Base Voltage

Collector Current

7.0

3.0

Collector pulse Current

Base Current

1.5

3.0

I_BM

Base Peak Current

t_P= 5ms

Total Dissipation at Tc = 25℃

Total Dissipation at Ta = 25℃

P_C

2.08

T_J

Operation Junction Temperature

Storage Temperature

- 40 ~ 150

℃

T_STG

Tc: Case temperature (good cooling)

Ta: Ambient temperature (without heat sink)

Thermal Characteristics

Symbol

Parameter

Value

Units

R_θJc

R_θJA

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

1.67

℃/W

62.5

℃/W

Jan 2009. Rev. 0

1/5

12 3 4 5

中文翻译

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