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SBM2045VDC_R2_00001 PDF预览

SBM2045VDC_R2_00001

更新时间: 2024-11-25 12:46:55
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
5页 99K
描述
UlTRA LOW VF SCHOTTKY RECTIFIER

SBM2045VDC_R2_00001 数据手册

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SBM2045VDC  
UlTRA LOW VF SCHOTTKY RECTIFIER  
20 Amperes  
VOLTAGE  
45 Volts  
CURRENT  
FEATURES  
0.189(4.8)  
0.137(4.4)  
0.409(10.4)  
0.387(9.80)  
• Ultra Low forward voltage drop, low power losses  
• High efficiency operation  
0.055(1.4)  
0.047(1.2)  
• Lead free in comply with EU RoHS 2011/65/EU directives  
0.110(2.8)  
0.236(6.0)  
0.197(5.0)  
MECHANICAL DATA  
0.026(0.7)  
0.011(0.3)  
Case : TO-263/D2PAK, Plastic  
0.055(1.4)  
0.039(1.0)  
0.035(0.9)MAX.  
Terminals : Solderable per MIL-STD-750, Method 2026  
Weight: 0.0514 ounces, 1.46 grams.  
0.108(2.75)  
0.092(2.35)  
0.108(2.75)  
0.092(2.35)  
MAXIMUM RATINGS(TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
45  
UNIT  
Maximum repetitive peak reverse voltage  
V
RRM  
V
A
per diode  
Maximum average forward rectified current  
per device  
20  
10  
I
F(AV)  
FSM  
Peak forward surge current 8.3ms single half sine-wave  
per diode  
I
280  
860  
A
superimposed on rated load  
Typical junction capacitance (V  
R=4V, f=1MHz)  
C
J
pF  
oC/W  
oC  
Typical thermal resistance per diode  
Operating junction temperature range  
Storage temperature range  
(Note 1)  
R  
JC  
3.5  
TJ  
-55 to + 150  
-55 to + 150  
TSTG  
oC  
Note : 1. Mounted on infinite heatsink.  
ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
V
TEST CONDITIONS  
MIN.  
45  
TYP.  
-
MAX.  
-
UNIT  
Breakdown voltage per diode  
BR  
I
R=0.5mA  
V
V
I
I
I
F
F
F
=1A  
=5A  
-
-
-
0.28  
0.36  
0.41  
-
-
TJ  
=25oC  
=10A  
0.45  
Instantaneous forward voltage per diode  
V
F
I
I
I
F
F
F
=1A  
=5A  
-
-
-
0.18  
0.28  
0.36  
-
-
-
TJ  
=125oC  
V
=10A  
V
V
R
=36V  
-
100  
-
A  
Reverse current per diode  
August 6,2013-REV.00  
I
R
T
TJ  
J
=25oC  
-
-
-
35  
320  
-
A  
mA  
R=45V  
=125oC  
PAGE . 1  

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