Datasheet > SBLB2030CT-E3

SBLB2030CT-E3

更新时间： 2024-11-28 01:16:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	144K
描述
Dual Common Cathode Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SBLB2030CT-E3 数据手册

SBL20x0CT, SBLF20x0CT, SBLB20x0CT,

www.vishay.com

Vishay General Semiconductor

Dual Common Cathode Schottky Rectifier

FEATURES

TO-220AB

ITO-220AB

• Power pack

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

SBL20x0CT

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C (for TO-263AB package)

SBLF20x0CT

PIN 1

PIN 2

CASE

PIN 1

PIN 2

PIN 3

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AB and ITO-220AB package)

PIN 3

TO-263AB

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

SBLB20x0CT

For use in low voltage, high frequency rectifier of switching

mode power supplies, freewheeling diodes, DC/DC

converters, and polarity protection application.

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

PRIMARY CHARACTERISTICS

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

I_F(AV)

2 x 10 A

V_RRM

30 V to 40 V

250 A

I_FSM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

V_F

0.60 V

T_Jmax.

Package

Diode variations

150 °C

TO-220AB, ITO-220AB, TO-263AB

Common cathode

meets JESD 201 class 2 whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SBL2030CT

SBL2040CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

V_RRM

V_RWM

V_DC

total device

per diode

Maximum average forward rectified current 

I_F(AV)

I_FSM

at T_C= 105 °C

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

250

1.0

Peak repetitive reverse surge current per diode at t_p= 2.0 μs, 1 kHz

Operating junction and storage temperature range

I_RRM

T_J, T_STG

V_AC

- 55 to + 150

1500

°C

Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min

Revision: 12-Jun-13

Document Number: 88730

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

与SBLB2030CT-E3相关器件

型号	品牌	获取价格	描述	数据表
SBLB2030CT-E3/45	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifier
SBLB2030CT-E3/81	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifier
SBLB2030CTHE3	VISHAY	获取价格	Dual Common Cathode Schottky Rectifier
SBLB2030CTHE3/45	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifier
SBLB2030CTHE3/81	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifier
SBLB2030CT-HE3/81	VISHAY	获取价格	DIODE 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
SBLB2035CT	BL Galaxy Electrical	获取价格	Schottky Barrier Rectifier
SBLB2040CT	GOOD-ARK	获取价格	Dual Low VF Schottky Barrier Rectifiers
SBLB2040CT	VISHAY	获取价格	SCHOTTKY RECTIFIER
SBLB2040CT	BL Galaxy Electrical	获取价格	Schottky Barrier Rectifier

与SBLB2030CT-E3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

63
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

SBLB2030CT-E3

SBLB2030CT-E3 数据手册

与SBLB2030CT-E3相关器件

与SBLB2030CT-E3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SBLB2030CT-E3

SBLB2030CT-E3 数据手册

与SBLB2030CT-E3相关器件

与SBLB2030CT-E3相关文章

您还可以找

您在本页遇到什么问题？