SBLB10L25-E3/81

更新时间： 2024-11-26 06:10:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	142K
描述
Low VF Schottky Barrier Rectifier

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数据手册

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SBLB10L25-E3/81 数据手册

SBL10L25, SBLF10L25, SBLB10L25

Vishay General Semiconductor

Low V Schottky Barrier Rectifier

FEATURES

TO-220AC

ITO-220AC

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Very low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

SBL10L25

PIN 1

SBLF10L25

PIN 1

CASE

PIN 2

• Solder dip 260 °C, 40 s (for TO-220AC and

ITO-220AC package)

PIN 2

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

SBLB10L25

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters and polarity protection application.

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, TO-263AB

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

10 A

25 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

240 A

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

V_F

0.35 V

150 °C

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SBL10L25

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

V_DC

Maximum DC blocking voltage

Maximum average forward rectified current at T_C= 135 °C

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

240

Peak repetitive reverse current at t_p= 2 µs, 1 kHz

Voltage rate of change (rated V_R)

I_RRM

dV/dt

1.0

10 000

V/µs

°C

Operating junction and storage temperature range

Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min

T_J, T_STG

V_AC

- 65 to + 150

1500

Document Number: 88723

Revision: 25-Apr-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

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与SBLB10L25-E3/81相关器件

型号	品牌	获取价格	描述	数据表
SBLB10L25HE3/45	VISHAY	获取价格	Low VF Schottky Barrier Rectifier
SBLB10L25HE3/81	VISHAY	获取价格	Low VF Schottky Barrier Rectifier
SBLB10L25-HE3/81	VISHAY	获取价格	DIODE 10 A, 25 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
SBLB10L25HE3_B/I	VISHAY	获取价格	Rectifier Diode,
SBLB10L30	VISHAY	获取价格	Schottky Barrier Rectifier
SBLB10L30/45	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-263AB
SBLB10L30-31	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-263AB, PLASTIC
SBLB10L30-81	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-263AB, PLASTIC
SBLB10L30-E3/45	VISHAY	获取价格	Low VF Schottky Barrier Rectifier
SBLB10L30-E3/81	VISHAY	获取价格	Low VF Schottky Barrier Rectifier

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