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SBLB10L25-E3/45 PDF预览

SBLB10L25-E3/45

更新时间: 2024-11-26 06:10:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 142K
描述
Low VF Schottky Barrier Rectifier

SBLB10L25-E3/45 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.52
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:240 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:25 V
最大反向电流:800 µA反向测试电压:25 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SBLB10L25-E3/45 数据手册

 浏览型号SBLB10L25-E3/45的Datasheet PDF文件第2页浏览型号SBLB10L25-E3/45的Datasheet PDF文件第3页浏览型号SBLB10L25-E3/45的Datasheet PDF文件第4页浏览型号SBLB10L25-E3/45的Datasheet PDF文件第5页 
SBL10L25, SBLF10L25, SBLB10L25  
Vishay General Semiconductor  
Low V Schottky Barrier Rectifier  
F
FEATURES  
TO-220AC  
ITO-220AC  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Very low forward voltage drop  
• High forward surge capability  
• High frequency operation  
2
2
1
1
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
SBL10L25  
PIN 1  
SBLF10L25  
PIN 1  
CASE  
PIN 2  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
PIN 2  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
TYPICAL APPLICATIONS  
1
SBLB10L25  
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters and polarity protection application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
10 A  
25 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
240 A  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
VF  
0.35 V  
150 °C  
TJ max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
SBL10L25  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
25  
18  
25  
10  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 135 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
240  
A
Peak repetitive reverse current at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
1.0  
10 000  
A
V/µs  
°C  
Operating junction and storage temperature range  
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min  
TJ, TSTG  
VAC  
- 65 to + 150  
1500  
V
Document Number: 88723  
Revision: 25-Apr-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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