Datasheet > SBL30A45F

SBL30A45F

更新时间： 2024-09-24 01:23:35

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	230K
描述
Low VF Planar MOS Barrier Schottky Rectifier

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中文翻译

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SBL30A45F 数据手册

SBL30A45F

Voltage 45V, 30A

Low VF Planar MOS Barrier Schottky Rectifier

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

FEATURES

ꢀ

Planar MOS Schottky technology

Low forward voltage drop

High current capability

High reliability

High surge current capability

Epitaxial construction

ITO-220

MECHANICAL DATA

ꢀ

Case: Molded plastic

Epoxy: UL94V-0 rate flame retardant

Lead: Lead solderable per MIL-STD-202

method 208 guaranteed

ꢀ

Polarity: As Marked

Mounting position: Any

ORDER INFORMATION

Part Number

Millimeter

Type

REF.

Min.

Max.

Min.

Max.

14.50

9.50

12.60

4.20

2.30

0.30

16.50

10.72

14.22

5.10

3.30

3.10

2.70

0.90

0.30

2.34

2.40

φ 3.0

4.35

1.70

0.95

2.75

3.60

φ 3.8

SBL30A45F

Lead (Pb)-free

SBL30A45F-C

Lead (Pb)-free and Halogen-free

0.75

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.)

Parameter

Maximum Recurrent Peak Reverse Voltage

Working Peak Reverse Voltage

Symbol

V_RRM

Ratings

Unit

V_RSM

Maximum DC Blocking Voltage

V_DC

Per Leg

Maximum Average Forward Rectified

Current

I_F

Per Device

Peak Forward Surge Current, 8.3 ms single half sine-wave

Superimposed on rated load (JEDEC method)

I_FSM

150

Voltage Rate of Chance (Rated V_R)

Typical Thermal Resistance

dv/dt

10000

V/µs

°C/W

°C

R_θ

Operating and Storage Temperature Range

T_J,T_STG

-55~150

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Typ.

Max.

0.37

0.42

0.48

0.57

Unit

Test Conditions

I_F=3A, T_J=25°C

0.34

0.38

0.46

0.54

0.53

I_F=5A, T_J=25°C

I_F=10A, T_J=25°C

I_F=15A, T_J=25°C

I_F=15A, T_J=125°C

T_J=25°C

Maximum Instantaneous Forward Voltage

V_F

0.5

Maximum DC Reverse Current

@Rated DC Blocking Voltage ²

Typical Junction Capacitance ¹

I_R

T_J=100°C

C_J

420

Notes:

1. Measured at 1MHz and applied reverse voltage of 5V D.C.

2. Pulse Test: Pulse Width=300µs, Duty Cycle≦2%.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

18-Sep-2018 Rev. A

Page 1 of 2

中文翻译

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与SBL30A45F相关器件

型号	品牌	获取价格	描述	数据表
SBL30A45F-C	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
SBL30A60	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
SBL30A60-C	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
SBL30A60F	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
SBL30A60F-C	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
SBL30B45CTH	SIRECT	获取价格	Power Schottky Rectifier - 30Amp 45Volt
SBL30B60CTH	SIRECT	获取价格	Power Schottky Rectifier - 30Amp 60Volt
SBL30B60FCTH	SIRECT	获取价格	Power Schottky Rectifier - 30Amp 60Volt
SBL30B65CTH_FCTH	SIRECT	获取价格	Power Schottky Rectifier - 30Amp 65Volt
SBL30H100R	SECOS	获取价格	VOLTAGE 100 V 30.0 Amp Low VF Schottky Barrier Rectifiers

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