Datasheet > SBL30A45

SBL30A45

更新时间： 2024-09-24 01:23:35

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	218K
描述
Low VF Planar MOS Barrier Schottky Rectifier

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SBL30A45 数据手册

SBL30A45

45V, 30A

Low VF Planar MOS Barrier Schottky Rectifier

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

FEATURES

TO-220

ꢀ

Planar MOS Schottky technology

Low forward voltage drop

High current capability

High reliability

High surge current capability

Epitaxial construction

MECHANICAL DATA

ꢀ

Case: Molded plastic

Epoxy: UL94V-0 rate flame retardant

Lead: Lead solderable per MIL-STD-202

method 208 guaranteed

ꢀ

Polarity: As Marked

Mounting position: Any

Millimeter

REF.

ORDER INFORMATION

Min.

Max.

16.51

10.90

14.75

5.10

1.47

3.19

0.76

4.5

Min.

Max.

1.78

1.11

3.07

3.43

4.31

9.65

14.22

9.57

0.70

0.38

2.01

2.22

3.10

8.10

Part Number

Type

Lead (Pb)-free

Lead (Pb)-free and Halogen-free

12.50

3.56

SBL30A45

0.51

2.03

SBL30A45-C

0.279

2.95

1.18 Typ.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.)

Parameter

Maximum Recurrent Peak Reverse Voltage

Working Peak Reverse Voltage

Symbol

V_RRM

Rating

Unit

V_RSM

Maximum DC Blocking Voltage

V_DC

Per Leg

Per Device

Maximum Average Forward Rectified

Current

I_F

Peak Forward Surge Current, 8.3 ms single half sine-wave

Superimposed on rated load (JEDEC method)

I_FSM

150

Voltage Rate of Chance (Rated V_R)

Typical Thermal Resistance

dv/dt

10000

V / µs

°C /W

°C

R_θ

Operating and Storage Temperature Range

T_J,T_STG

-55~150

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Typ.

Max.

0.37

0.42

0.48

0.57

Unit

Test Condition

I_F=3A, T_J=25°C

0.34

0.38

0.46

0.54

0.53

I_F=5A, T_J=25°C

I_F=10A, T_J=25°C

I_F=15A, T_J=25°C

I_F=15A, T_J=125°C

T_J=25°C

.Maximum Instantaneous Forward

Voltage

V_F

0.5

Maximum DC Reverse Current

at Rated DC Blocking Voltage ²

Typical Junction Capacitance ¹

I_R

T_J=100°C

C_J

420

Notes:

1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.

2. Pulse Test：Pulse Width = 300 µs, Duty Cycle ≦ 2.0%.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

14-Sep-2018 Rev. A

Page 1 of 2

中文翻译

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与SBL30A45相关器件

型号	品牌	获取价格	描述	数据表
SBL30A45-C	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
SBL30A45F	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
SBL30A45F-C	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
SBL30A60	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
SBL30A60-C	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
SBL30A60F	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
SBL30A60F-C	SECOS	获取价格	Low VF Planar MOS Barrier Schottky Rectifier
SBL30B45CTH	SIRECT	获取价格	Power Schottky Rectifier - 30Amp 45Volt
SBL30B60CTH	SIRECT	获取价格	Power Schottky Rectifier - 30Amp 60Volt
SBL30B60FCTH	SIRECT	获取价格	Power Schottky Rectifier - 30Amp 60Volt

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