Datasheet > SBL3045DC

SBL3045DC

更新时间： 2024-09-24 14:52:31

品牌	Logo	应用领域
WON-TOP		/
页数	文件大小	规格书
4页	43K
描述
SMD

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SBL3045DC 数据手册

SBL3020DC – SBL3045DC

30A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

WON-TOP ELECTRONICS

Features



Low Forward Voltage



Epitaxial Construction with Oxide Passivation

Guard Ring for Transient and ESD Protection

Surge Overload Rating to 200A Peak

Low Power Loss, High Efficiency

Fast Switching

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Switching

Power Supplies

PIN 1

D²PAK/TO-263

Mechanical Data



Dim

Min

9.80

9.60

4.40

8.50

—

Max

10.40

10.60

4.80

9.10

2.80

1.40

0.99

1.40

0.70

2.75

Case: D²PAK/TO-263, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208



Polarity: See Diagram

Weight: 1.7 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1

PIN 3

Case, PIN 2

1.00

—

1.20

0.30

2.35

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

SBL

3020DC

SBL

3030DC

SBL

3040DC

SBL

3045DC

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 100°C

Total Device

Per Diode

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed

on Rated Load (JEDEC Method)

IFSM

VFM

200

Forward Voltage per diode @I_F= 15A, T_J= 25°C

@I_F= 15A, T_J= 125°C

0.55

0.50

Peak Reverse Current

At Rated DC Blocking Voltage

@T_J= 25°C

@T_J= 100°C

1.0

IRM

Typical Junction Capacitance (Note 1)

750

Thermal Resistance Junction to Ambient (Note 2)

Thermal Resistance Junction to Case (Note 2)

RθJA

RθJC

1.5

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Mounted on FR-4 PCB with minimum recommended pad layout per diode.

Revision: September, 2012

www.wontop.com

12 3 4

中文翻译

下载PDF

与SBL3045DC相关器件

型号	品牌	获取价格	描述	数据表
SBL3045DPT{TUBE}	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon
SBL3045DPT-A	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon,
SBL3045E	JSMC	获取价格	TO-220
SBL3045FCT	CJ	获取价格	SCHOTTKY BARRIER RECTIFIER
SBL3045FCT	WON-TOP	获取价格	Powerpack
SBL3045PT	EIC	获取价格	Schottky Barrier Rectifiers
SBL3045PT	BL Galaxy Electrical	获取价格	SCHOTTKY BARRIER RECTIFIER
SBL3045PT	SIRECTIFIER	获取价格	肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Lo
SBL3045PT	DIODES	获取价格	30A SCHOTTKY BARRIER RECTIFIER
SBL3045PT	ADPOW	获取价格	Rectifier Diode, Schottky, 30A, 45V V(RRM)