Datasheet > SBL2060CT

SBL2060CT

更新时间： 2024-11-19 00:02:03

品牌	Logo	应用领域
SIRECTIFIER		二极管
页数	文件大小	规格书
2页	103K
描述
肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。

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SBL2060CT 数据手册

SBL2050CT thru SBL2060CT

Low VF Schottky Barrier Rectifiers

Dimensions TO-220AB

Dim.

Inches

Min. Max.

Milimeter

Min. Max.

0.500 0.550

0.580 0.630

0.390 0.420

0.139 0.161

0.230 0.270

0.100 0.125

0.045 0.065

0.110 0.230

0.025 0.040

12.70 13.97

14.73 16.00

9.91 10.66

C(TAB)

3.54

5.85

2.54

1.15

2.79

0.64

2.54

4.32

1.14

0.35

2.29

4.08

6.85

3.18

1.65

5.84

1.01

BSC

4.82

1.39

0.56

2.79

A=Anode, C=Cathode, TAB=Cathode

VRRM

VRMS

VDC

0.100

BSC

0.170 0.190

0.045 0.055

0.014 0.022

0.090 0.110

SBL2050CT

SBL2060CT

Symbol

Characteristics

Maximum Ratings

Unit

I(AV)

IFSM

Maximum Average Forward Rectified Current @TC=95^oC

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

250

Maximum Forward Voltage At 10.0A DC (Note 1)

0.75

Maximum DC Reverse Current

At Rated DC Blocking Voltage

@TJ=25^oC

@TJ=100^oC

ROJC

Typical Junction Capacitance Per Element (Note 2)

Typical Thermal Resistance (Note 3)

Operating Temperature Range

600

^oC/W

^oC

2.0

-55 to +125

-55 to +150

TSTG

Storage Temperature Range

^oC

NOTES: 1. 300us Pulse Width, 2% Duty Cycle.

2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

3. Thermal Resistance Junction To Case.

FEATURES

MECHANICAL DATA

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High current capability, low VF

* Case: TO-220AB molded plastic

* Polarity: As marked on the body

* Weight: 0.08 ounces, 2.24 grams

* Mounting position: Any

* High surge capacity

* For use in low voltage, high frequency inverters, free

whelling, and polarity protection applications

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