Datasheet > SBL13003

SBL13003

更新时间： 2022-12-29 05:08:32

品牌	Logo	应用领域
SEMIWELL		晶体开关晶体管高压
页数	文件大小	规格书
5页	683K
描述
High Voltage Fast-Switching NPN Power Transistor

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SBL13003 数据手册

SemiWell Semiconductor

SBL13003

High Voltage Fast-Switching NPN Power Transistor

Features

Symbol

○

2.Collector

- Very High Switching Speed (Typical 120ns@1.0A)

- Minimum Lot-to-Lot hFE Variation

- Low VCE(sat) (Typical 200mV@1.0A/0.25A)

- Wide Reverse Bias S.O.A

○

1.Base

○

3.Emitter

General Description

TO-92L

This devices is designed for high voltage, high speed switching

characteristic required such as lighting system, switching regulator,

inverter and deflection circuit.

Absolute Maximum Ratings

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Value

700

400

9.0

Units

Collector-Emitter Voltage ( V_BE= 0 )

Collector-Emitter Voltage ( I_B= 0 )

Emitter-Base Voltage ( I_C= 0 )

Collector Current

1.5

Collector Peak Current ( t_P＜ 5 ms )

Base Current

I_CM

3.0

I_B

0.75

1.5

Base Peak Current ( t_P＜ 5 ms )

Total Dissipation at T_A= 25 °C

I_BM

P_C

T_STG

T_J

1.5

- 65 ~ 150

150

°C

Storage Temperature

Max. Operating Junction Temperature

Thermal Characteristics

Symbol

Parameter

Value

Units

R_θJA

Thermal Resistance, Junction-to-Ambient

°C/W

Oct, 2002. Rev. 2

1/5

12 3 4 5

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