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SBL1050CTP PDF预览

SBL1050CTP

更新时间: 2024-02-16 11:07:30
品牌 Logo 应用领域
美微科 - MCC 局域网功效瞄准线二极管
页数 文件大小 规格书
2页 740K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 50V V(RRM), Silicon, TO-220AB, TO-220AB, 3 PIN

SBL1050CTP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220AB, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.73
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:3最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:50 V
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SBL1050CTP 数据手册

 浏览型号SBL1050CTP的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
SBL1020CT  
THRU  
Micro Commercial Components  
SBL10100CT  
Features  
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton  
Guard ring for transient protection  
Low power loss high efficiency  
High surge capacity, High current capability  
10 Amp  
Schottky Barrier  
Rectifier  
20 to 100 Volts  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
TO-220AB  
:
Microsemi  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Maximum Maximum  
B
L
RMS  
DC  
M
C
Voltage  
Blocking  
Voltage  
D
Reverse  
Voltage  
20V  
A
K
E
F
SBL1020CT SBL1020CT  
SBL1030CT SBL1030CT  
SBL1040CT SBL1040CT  
SBL1050CT SBL1050CT  
SBL1060CT SBL1060CT  
14  
21  
28  
35  
42  
20V  
30V  
40V  
50V  
60V  
PIN  
30V  
40V  
50V  
60V  
G
SBL1080CTSBL1080CT  
SBL10100CTSBL10100CT  
80V  
100V  
56  
70  
80V  
100V  
I
J
N
H
H
PIN 1  
PIN 3  
PIN 2  
CASE  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
10A  
TC = 100°C  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢀ ꢀ ꢀ ꢀ  
INCHES  
MM  
Peak Forward Surge  
Current  
IFSM  
150A  
8.3ms, half sine  
ꢁꢂꢃ  
A
B
ꢃꢂꢄ  
.560  
.380  
.100  
ꢃꢅꢆ  
ꢃꢂꢄ  
14.22  
9.65  
ꢃꢅꢆ  
15.88  
10.67  
3.43  
ꢄꢇꢈꢉ  
.625  
.420  
.135  
C
2.54  
D
E
F
G
H
I
J
K
L
.230  
.380  
------  
.500  
.090  
.020  
.012  
.139  
.140  
.045  
.270  
.420  
.250  
.580  
.110  
.045  
.025  
.161  
.190  
.055  
5.84  
9.65  
------  
12.70  
2.29  
0.51  
0.30  
3.53  
3.56  
1.14  
2.03  
6.86  
10.67  
6.35  
14.73  
2.79  
1.14  
0.64  
4.09  
4.83  
1.40  
Maximum Forward  
Voltage Drop Per  
VF  
IR  
.55V  
IFM = 10 A mper  
1020CT-1040CT  
1050CT-1060CT  
1080CT-10100CT  
Element  
TA =  
25°C  
.75V  
.85V  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
M
N
.080  
.115  
2.92  
0.5mA TJ = 25°C  
50mA TJ = 125C  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  
Revision: 4  
2004/10/07  

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