Datasheet > SBG2030CT-BP

SBG2030CT-BP

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	121K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 30V V(RRM), Silicon, D2PAK-3

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SBG2030CT-BP 数据手册

M C C

SBG2030CT

THRU

SBG2045CT

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

20 Amp

Schottky

Barrier Rectifier

30 to 45 Volts

Features

Meatl of Silicon Rectifier, Majority Conducton

Guard ring for transient protection

Low Forward Voltage Drop

High Current Capability, High Efficiency

Low Power Loss

D²PAK

Maximum Ratings

Operating Junction Temperature: -55°C to +125°C

Storage Temperature: -55°C to +150°C

MCC

Catalog

Number

Maximum

Recurrent

Peak Reverse

Voltage

30V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

30V

SBG2030CT

SBG2035CT

SBG2040CT

SBG2045CT

21V

35V

40V

45V

24.5V

28V

35V

40V

31.5V

45V

PIN 1

PIN 2

HEATSINK

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

I_F(AV)

20 A

T_C= 105°C

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

I_FSM

225A

8.3ms, half sine

ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ

ꢇ ꢇ ꢇ ꢇ

INCHES

ꢂꢁꢄ

ꢀꢁꢂ

ꢂꢈꢉ

.421

.625

.364

ꢂꢁꢄ

9.65

14.60

8.25

ꢂꢈꢉ

10.69

15.88

9.25

ꢄꢆꢊꢃ

V_F

.55V

I_FM= 10A;

T_J= 25°C

.380

.575

.325

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

.045

.020

.090

.080

.045

.012

.055

.045

.110

.115

.055

.025

1.14

0.51

2.29

2.03

1.14

0.30

1.40

1.14

2.79

2.92

1.40

0.64

I_R

1.0mA

50mA

T_J= 25°C

T _J= 100°C

Typical Junction

Capacitance

C_J

350pF Measured at

1.0MHz,

.172

.190

4.37

4.83

V_R=4.0V

*Pulse Test: Pulse Width 300msec, Duty Cycle 2%

www.mccsemi.com

Revision: 3

2003/04/30

中文翻译

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