5秒后页面跳转
SBF4089ZPCK1 PDF预览

SBF4089ZPCK1

更新时间: 2024-01-05 18:27:42
品牌 Logo 应用领域
威讯 - RFMD 放大器
页数 文件大小 规格书
8页 643K
描述
DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

SBF4089ZPCK1 数据手册

 浏览型号SBF4089ZPCK1的Datasheet PDF文件第2页浏览型号SBF4089ZPCK1的Datasheet PDF文件第3页浏览型号SBF4089ZPCK1的Datasheet PDF文件第4页浏览型号SBF4089ZPCK1的Datasheet PDF文件第5页浏览型号SBF4089ZPCK1的Datasheet PDF文件第6页浏览型号SBF4089ZPCK1的Datasheet PDF文件第7页 
SBF4089ZDC  
to 500MHz,  
Cascadable  
InGaP/GaAs  
HBT MMIC  
Amplifier  
SBF4089Z  
DC to 500MHz, CASCADABLE InGaP/GaAs  
HBT MMIC AMPLIFIER  
Package: SOT-89  
Product Description  
Features  
RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-  
sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-  
nology provides broadband performance up to 0.5GHz with excellent thermal  
performance. The heterojunction increases breakdown voltage and minimizes leak-  
age current between junctions. Cancellation of emitter junction non-linearities  
results in higher suppression of intermodulation products. Only a single positive  
supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke  
are required for operation.  
IP =42dBm at 240MHz  
3
Stable Gain Over  
Temperature  
Robust 1000V ESD, Class 1C  
Operates From Single Supply  
Low Thermal Resistance  
Optimum Technology  
Matching® Applied  
Applications  
S-Parameters vs Frequency +25c  
GaAs HBT  
Receiver IF Amplifier  
Cellular, PCS, GSM, UMTS  
PA Driver Amplifier  
16  
15.5  
15  
0
s21  
s11  
s22  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
-5  
14.5  
14  
-10  
-15  
-20  
-25  
Wireless Data, Satellite  
Terminals  
13.5  
13  
12.5  
12  
Si BJT  
11.5  
11  
GaN HEMT  
InP HBT  
0
100  
200  
300  
400  
500  
600  
700  
800  
900  
Freq  
RF MEMS  
LDMOS  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
14.9  
14.8  
14.7  
20.1  
20.1  
19.9  
40.0  
42.0  
41.0  
17.0  
16.0  
3.3  
Max.  
Small Signal Gain  
dB  
dB  
dB  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
70MHz  
13.3  
13.2  
16.3  
16.2  
240MHz  
500MHz  
70MHz  
240MHz  
400MHz  
70MHz  
240MHz  
400MHz  
500MHz  
500MHz  
500MHz  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
18.4  
39.0  
13.0  
12.0  
Input Return Loss  
Output Return Loss  
Noise Figure  
Device Operating Voltage  
Device Operating Current  
Thermal Resistance  
dB  
dB  
V
mA  
4.3  
5.3  
98  
4.5  
82  
4.9  
90  
43  
°C/W  
junction to lead  
Test Conditions: V =8V, I =90mA Typ., T =25°C. OIP Tone Spacing=1MHz, P  
per tone=0dBm, R  
=33. Data with Application Circuit.  
BIAS  
S
D
L
3
OUT  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS111011  
1 of 8  

与SBF4089ZPCK1相关器件

型号 品牌 获取价格 描述 数据表
SBF4089ZSQ RFMD

获取价格

DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER
SBF4089ZSR RFMD

获取价格

DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER
SBF-5089 SIRENZA

获取价格

DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
SBF5089Z RFMD

获取价格

DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER
SBF-5089Z SIRENZA

获取价格

DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
SBF5089ZPCK1 RFMD

获取价格

DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER
SBF5089ZSQ RFMD

获取价格

DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER
SBF5089ZSR RFMD

获取价格

DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER
SBF50N06-005L SENSITRON

获取价格

Power Field-Effect Transistor, 50A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Met
SBF50N06-011 SENSITRON

获取价格

Power Field-Effect Transistor, TO-254AA, HERMETIC SEALED, METAL, MODIFIED TO-254CG, 3 PIN