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SBF13009-O PDF预览

SBF13009-O

更新时间: 2024-01-09 14:57:33
品牌 Logo 应用领域
稳先微 - WINSEMI 晶体开关晶体管高压
页数 文件大小 规格书
5页 582K
描述
High Voltage Fast-Switching NPN Power Transistor

SBF13009-O 数据手册

 浏览型号SBF13009-O的Datasheet PDF文件第2页浏览型号SBF13009-O的Datasheet PDF文件第3页浏览型号SBF13009-O的Datasheet PDF文件第4页浏览型号SBF13009-O的Datasheet PDF文件第5页 
SBF13009-O  
High Voltage Fast-Switching NPN Power Transistor  
Features  
Very High Switching Speed  
High Voltage Capability  
Wide Reverse Bias SOA  
General Description  
This Device is designed for high voltage, High speed  
switching characteristics required such as lighting system,  
switching mode power supply.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Test Conditions  
VBE = 0  
Value  
Units  
VCES  
Collector-Emitter Voltage  
700  
V
VCEO  
Collector-Emitter Voltage  
400  
V
IB = 0  
IC = 0  
VEBO  
IC  
ICP  
IB  
Emitter-Base Voltage  
Collector Current  
9.0  
12*  
25  
V
A
A
A
A
Collector pulse Current  
Base Current  
6.0  
12  
IBM  
Base Peak Current  
tP = 5ms  
Total Dissipation at Tc = 25  
Total Dissipation at Ta = 25℃  
50  
PC  
W
2.2  
-40 ~ 150  
-40 ~ 150  
TJ  
Operation Junction Temperature  
Storage Temperature  
TSTG  
Tc: Case temperature (good cooling)  
Ta: Ambient temperature (without heat sink)  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
RθJc  
RθJA  
Thermal Resistance Junction to Case  
Thermal Resistance Junction to Ambient  
2.50  
/W  
62.5  
/W  
1

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