Datasheet > SBDB20H100LCTB

SBDB20H100LCTB

更新时间： 2023-12-06 20:08:40

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1295K
描述
TO-263-2L

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数据手册

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SBDB20H100LCTB 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-263-2L Plastic-Encapsulate Diode

SBDB20H100LCTB

SCHOTTKY BARRIER RECTIFIER

MAIN CHARACTERISTICS

I_O

20（2×10）A

V_RRM

T_j

100 V

TO-263-2L

175 ℃

V_F(typ)

0.64V （@Tj=150℃）

FEATURES

1. ANODE

2. CATHODE

3. ANODE

 Low Power Loss,High Efficiency

 Guard Ring Die Construction for Transient Protection

 High Current Capability and Low Forward Voltage Drop

MARKING

SBDB20H100LCTB = Device code

Solid dot = Green molding compound device

if none, the normal device

SBD

B20H100CTB

XXXX

XXXX = Code

MAXIMUM RATINGS ( T_a=25℃℃ unless otherwise noted )

Value

Symbol

Parameter

Peak repetitive reverse voltage

Unit

V_RRM

V_RWM

V_R

Working peak reverse voltage

DC blocking voltage

100

RMS reverse voltage

V_R(RMS)

I_O

Average rectified output current

Non-Repetitive peak forward surge current (

8.3ms half sine wave)

I_FSM

300

2.0

R_ΘJc

℃/W

Thermal resistance from junction to case ,Tc=25

Thermal resistance from junction to ambient

Junction temperature

℃

R_ΘJA

T_j

℃/W

℃

62.5

175

Storage temperature

-55~+175

T_stg

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Reverse voltage

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)

IR=100uA

100

Tj =25℃

0.2

2.0

0.5

I_R

Reverse current

_R=100V

Tj =150℃

Tj =25℃

Tj =150℃

0.68

I_F=5A

0.51

0.74

V_F

Forward voltage

Tj =25℃

0.80

I_F=10A

Tj =150℃

0.64

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

www.jscj-elec.com

Rev. - 1.0

12 3 4

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