JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diode
SBDB2060TCTB SCHOTTKY BARRIER RECTIFIER
MAIN CHARACTERISTICS
IO
20(2×10)A
60V
VRRM
Tj
TO-263-2L
150 ℃
VF(typ)
0.47V (@Tj=125℃)
FEATURES
1. ANODE
2. CATHODE
3. ANODE
Low Power Loss,High Efficiency
2
Guard Ring Die Construction for Transient Protection
High Current Capability and Low Forward Voltage Drop
1
3
MARKING
1
3
2
SBD
SBDB2060TCTB = Device code
B2060TCTB
Solid dot = Green molding compound device
if none, the normal device
XXXX = Code
XXXX
MAXIMUM RATINGS ( Ta=25℃℃ unless otherwise noted )
Value
Symbol
Parameter
Peak repetitive reverse voltage
Unit
VRRM
VRWM
VR
V
Working peak reverse voltage
DC blocking voltage
60
RMS reverse voltage
42
V
A
VR(RMS)
IO
Average rectified output current
Non-Repetitive peak forward surge current (
20
8.3ms half sine wave)
IFSM
180
2.0
A
RΘJc
Thermal resistance from junction to case ,Tc=25
Thermal resistance from junction to ambient
Junction temperature
℃/W
℃
RΘJA
Tj
℃/W
℃
62.5
150
Storage temperature
-55~+150
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Reverse voltage
V(BR)
IR=1mA
60
V
uA
mA
V
27
13
Tj =25℃
50
IR
Reverse current
Forward voltage
V
R=60V
Tj =125℃
Tj =25℃
Tj =125℃
0.42
IF=5A
V
V
V
0.35
0.49
VF
Tj =25℃
0.60
IF=10A
Tj =125℃
0.47
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
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1
Rev. - 1.0