JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L/TO-220F-B Plastic-Encapsulate Diode
SCHOTTKY BARRIER RECTIFIER
SBD30100TA、SBDF30100TA
MAIN CHARACTERISTICS
IO
30A
VRRM
Tj
100 V
TO-220-3L
TO-220F-B
150℃
VF(typ)
0.72V (@Tj=125℃)
FEATURES
Low Power Loss,High Efficiency
Guard Ring Die Construction for Transient Protection
High Current Capability and Low Forward Voltage Drop
1
2
MARKING
3
1
2
3
1. ANODE
2. CATHODE
3. ANODE
1
3
SBD(F)30100TA = Device code
2
SBD
F30100TA
Solid dot = Green molding compound device
if none, the normal device
XXXX = Code
SBD
30100TA
XXXX
XXXX
MAXIMUM RATINGS ( Ta=25℃℃ unless otherwise noted )
SBD
Symbol
Parameter
Peak repetitive reverse voltage
Unit
F30100TA
30100TA
VRRM
VRWM
VR
V
Working peak reverse voltage
DC blocking voltage
100
RMS reverse voltage
70
30
V
A
VR(RMS)
IO
Average rectified output current
Non-Repetitive peak forward surge current (
250
8.3ms half sine wave)
IFSM
A
RΘJc
Thermal resistance from junction to case ,Tc=25
Thermal resistance from junction to ambient
Junction temperature
℃/W
℃
2.0
3.0
62.5
RΘJA
Tj
℃/W
℃
150
Storage temperature
-55~+150
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
V
Reverse voltage
IR=0.1mA
V(BR)
100
uA
mA
10.0
10.0
0.62
100
Tj =25℃
IR
Reverse current
Forward voltage
V
R=100V
Tj =125℃
Tj =25℃
V
V
V
V
IF=15A
Tj =125℃
Tj =25℃
Tj =125℃
0.58
VF
0.78
0.86
IF=30A
0.72
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
www.jscj-elec.com
Rev. - 1.0
1