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SBB3089ZPCK1 PDF预览

SBB3089ZPCK1

更新时间: 2024-09-30 01:10:39
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威讯 - RFMD /
页数 文件大小 规格书
5页 387K
描述
50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK

SBB3089ZPCK1 数据手册

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SBB3089Z  
50MHz to 6000MHz InGaP HBT ACTIVE BIAS  
GAIN BLOCK  
Package: SOT-89  
Product Description  
Features  
RFMD’s SBB3089Z is a high performance InGaP HBT MMIC amplifier uti-  
lizing a Darlington configuration with an active bias network. The active  
bias network provides stable current over temperature and process Beta  
variations. The SBB3089Z product is designed for high linearity 5V gain  
block applications that require excellent gain flatness, small size, and min-  
imal external components. It is internally matched to 50.  
Single Fixed 5V Supply  
Patented Self Bias Circuit and  
Thermal Design  
Gain=16.4dBm at 1950MHz  
P
=15.2dBm at 1950MHz  
1dB  
OIP =29.5dBm at 1950MHz  
3
Gain and Return Loss VS = 5V, IS = 42mA  
30  
Optimum Technology  
Robust 1000V ESD, Class 1C  
HBM  
Matching® Applied  
S21  
20  
GaAs HBT  
GaAs MESFET  
Applications  
10  
InGaP HBT  
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C  
PA Driver Amplifier  
SiGe BiCMOS  
0
Si BiCMOS  
Cellular, PCS, GSM, UMTS  
IF Amplifier  
-10  
-20  
-30  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
S11  
Wireless Data, Satellite  
Wideband Instrumentation  
S22  
  
Si BJT  
GaN HEMT  
InP HBT  
RF MEMS  
LDMOS  
0
1
2
3
4
5
6
Frequency (GHz)  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
15.1  
14.9  
Max.  
18.1  
17.9  
Small Signal Gain  
16.6  
16.4  
16.3  
15.6  
15.2  
15.4  
30.0  
29.5  
29.5  
21  
dB  
dB  
dB  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
850MHz  
1950MHz  
2400MHz  
850MHz  
1950MHz  
2400MHz  
850MHz  
1950MHz  
2400MHz  
1950MHz  
1950MHz  
1950MHz  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
14.2  
27.5  
Input Return Loss  
Output Return Loss  
Noise Figure  
16  
19  
25.5  
3.9  
4.2  
dB  
dB  
V
4.9  
4.3  
Device Operating Voltage  
R
=20, V =5.0V  
DC  
S
Device Operating Current  
Operational Current Range  
Thermal Resistance  
38  
30  
42  
46  
46  
mA  
mA  
R
=20, V =5.0V  
DC  
S
Per user preference via R  
Junction to lead  
DC  
80  
°C/W  
Test Conditions: V =4.2V, I =42mA, T =25°C , OIP Tone Spacing=1MHz, R =20, Bias Tee Data, Z =Z =50, P per tone=-5dBm  
OUT  
D
D
L
3
DC  
S
L
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS130718  
1 of 5  

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