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SBB-4000

更新时间： 2024-02-07 17:01:58
品牌 Logo 应用领域
威讯 - RFMD 放大器射频微波
页数 文件大小 规格书
6页 199K
描述
0.05GHZ TO 6GHZ, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER

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中文翻译

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SBB-4000 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：DIE OR CHIPReach Compliance Code：compliant
风险等级：5.68Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
增益：17 dB功能数量：1
最大工作频率：6000 MHz最小工作频率：50 MHz
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装等效代码：DIE OR CHIP
电源：5 V射频/微波设备类型：WIDE BAND LOW POWER
子类别：RF/Microwave AmplifiersBase Number Matches：1

SBB-4000 数据手册

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SBB-4000  
0.05GHz to  
6GHz, Cascad-  
able Active  
Bias InGaP  
HBT MMIC  
Amplifier  
Preliminary  
SBB-4000  
0.05GHZ TO 6GHZ, CASCADABLE ACTIVE  
BIAS InGaP HBT MMIC AMPLIFIER  
Package: Bare Die  
Product Description  
Features  
RFMD’s SBB-4000 is a high performance InGaP HBT MMIC amplifier utilizing a Dar-  
lington configuration with an active bias network. The active bias network provides  
stable current over temperature and process Beta variations. Its efficient operation  
from a single 5V supply and its compact size (0.59mmx0.70mm) make it ideal for  
high density multi-chip module applications. It is well-suited for high linearity 5V  
gain block applications and it is internally matched to 50Ω.  
ꢀ
OIP3=36.5dBm @ 2000MHz  
ꢀ
P1dB=19.5dBm @  
2000MHz  
ꢀ
ꢀ
Single Fixed 5V Supply  
Compact Die Size  
(0.59mmx0.7mm)  
RFMD can provide 100% DC screening, visual inspection, and Hi Rel water qualifi-  
cation. Die can be delivered at the wafer level or picked to gel  
ꢀ
ꢀ
Patented Thermal Design &  
Bias Circuit  
or waffle paks.  
Optimum Technology  
Matching® Applied  
Gain and Return Loss versus Frequency  
Low Thermal Resistance  
VS=5V, IS=82mA  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
30.0  
20.0  
10.0  
0.0  
Applications  
ꢁ
ꢀ
PA Driver Amplifier  
GSG Probe Data with Bias Tees  
ZS=ZL=50 Ohms, T=25°C  
ꢀ
RF Pre-driver and RF Receive  
Path  
-10.0  
-20.0  
-30.0  
-40.0  
ꢀ
ꢀ
Military Communications  
Test and Instrumentation  
GaAs pHEMT  
Si CMOS  
IRL  
Gain  
ORL  
Si BJT  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
GaN HEMT  
RF MEMS  
Frequency (GHz)  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
50  
Max.  
6000  
Frequency of Operation  
Small Signal Gain  
MHz  
dB  
dB  
15.5  
16.0  
17.0  
20.0  
19.5  
17.5  
41.5  
36.5  
29.0  
20.5  
15.0  
82.0  
4.2  
Frequency=500Mhz  
Frequency=2000MHz  
Frequency=4000MHz  
Frequency=500MHz  
Frequency=2000MHz  
Frequency=4000MHz  
Frequency=500MHz  
Frequency=2000MHz  
Frequency=4000MHz  
Frequency=2000MHz  
Frequency=2000MHz  
dB  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
dB  
mA  
dB  
Input Return Loss  
Output Return Loss  
Current  
Noise Figure  
Frequency=2000MHz  
Thermal Resistance  
69.9  
°C/W  
Junction to lead (89 pkg)  
Test Conditions: Z =50Ω, V =5V, I =82mA, T=25°C, OIP3 Tone Spacing=1MHz, P /tone=0dBm. GSG Probe Data with Bias Tees.  
0
D
D
OUT  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or techni-  
cal support, contact RFMD at (+1) 336-678-5570 or sales-sup-  
EDS-106101 Rev A  
1 of 6  
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中文翻译

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