Datasheet > SBB-3089Z

SBB-3089Z

更新时间： 2024-02-04 00:22:50

品牌	Logo	应用领域
威讯 - RFMD		/
页数	文件大小	规格书
6页	252K
描述
50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SBB-3089Z 数据手册

SBB-3089Z

50MHz to

6000MHz

InGaP HBT

Active Bias

Gain Block

Preliminary

SBB-3089Z

50MHz to 6000MHz InGaP HBT ACTIVE BIAS

GAIN BLOCK

RoHS Compliant and Pb-Free Product

Package: SOT-89

Product Description

Features

RFMD’s SBB-3089Z is a high performance InGaP HBT MMIC amplifier uti-

lizing a Darlington configuration with an active bias network. The active

bias network provides stable current over temperature and process Beta

variations. The SBB-3089Z product is designed for high linearity 5V gain

block applications that require excellent gain flatness, small size, and min-

imal external components. It is internally matched to 50Ω.

ꢀ

Single Fixed 5V Supply

ꢀ

Patented Self Bias Circuit and

Thermal Design

ꢀ

Gain=16.4dBm at 1950MHz

=15.2dBm at 1950MHz

1dB

Gain and Return Loss

ꢀ

OIP =29.5dBm at 1950MHz

V_S= 5V, I_S= 42mA

30.0

Robust 1000V ESD, Class 1C

HBM

Optimum Technology

Matching® Applied

20.0

ꢀ

MSL 1 Moisture Rating

GaAs HBT

S21

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

10.0

0.0

Applications

Bias Tee Data, Z_S= Z_L= 50 , T_L= 25°C

ꢁ

ꢀ

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

IF Amplifier

-10.0

-20.0

-30.0

S11

GaAs pHEMT

Si CMOS

S22

Wireless Data, Satellite

Wideband Instrumentation

Si BJT

0.0

1.0

2.0

3.0

4.0

5.0

6.0

GaN HEMT

RF MEMS

Frequency (GHz)

Specification

Typ.

Parameter

Unit

Condition

Min.

Max.

Small Signal Gain

16.6

16.4

16.3

15.6

15.2

15.4

30.0

29.5

21.0

25.5

3.9

dBm

850MHz

1950MHz

2400MHz

850MHz

1950MHz

2400MHz

850MHz

1950MHz

2400MHz

1950MHz

Output Power at 1dB Compression

Output Third Order Intercept Point

Input Return Loss

Output Return Loss

Noise Figure

Device Operating Voltage

4.2

4.3

=20Ω, V =5.0V

Device Operating Current

Operational Current Range

Thermal Resistance

42.0

=20Ω, V =5.0V

Per user preference via R

Junction to lead

°C/W

Test Conditions: V =4.2V I =42mA T =25°C OIP Tone Spacing=1MHz

=20Ω Bias Tee Data Z =Z =50Ω

P per tone=-5dBm

OUT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

EDS-105803 Rev C

1 of 6

12 3 4 5 6

中文翻译

下载PDF

与SBB-3089Z相关器件

型号	品牌	获取价格	描述	数据表
SBB-3089Z-EVB1	RFMD	获取价格	50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK
SBB3089ZPCK1	RFMD	获取价格	50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK
SBB3089ZSQ	RFMD	获取价格	50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK
SBB3089ZSR	RFMD	获取价格	50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK
SBB35051081-SA	AMPHENOL	获取价格	Board Stacking Connector
SBB35051101-SA	AMPHENOL	获取价格	Board Stacking Connector
SBB35051261-SA	AMPHENOL	获取价格	Board Stacking Connector
SBB35051441-SA	AMPHENOL	获取价格	Board Stacking Connector
SBB35052161-SA	AMPHENOL	获取价格	Board Stacking Connector
SBB35052181-SA	AMPHENOL	获取价格	Board Stacking Connector

与SBB-3089Z相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

9
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

9
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

11
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

13

产品中心

服务支持

精选活动

关于我们

帮助中心

SBB-3089Z

SBB-3089Z 数据手册

与SBB-3089Z相关器件

与SBB-3089Z相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SBB-3089Z

SBB-3089Z 数据手册

与SBB-3089Z相关器件

与SBB-3089Z相关文章

您还可以找

您在本页遇到什么问题？