Datasheet > SBA5086ZPCK1

SBA5086ZPCK1

更新时间： 2024-12-02 01:10:39

品牌	Logo	应用领域
威讯 - RFMD		放大器
页数	文件大小	规格书
6页	550K
描述
DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

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SBA5086ZPCK1 数据手册

SBA5086Z

DCto5GHz, CASCADABLE InGaP/GaAs HBT

MMIC AMPLIFIER

Package: SOT-86

Product Description

Features

RFMD’s SBA5086Z is a high performance InGaP/GaAs Heterojunction Bipolar Tran-

sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-

nology provides broadband performance up to 5GHz with excellent thermal

performance. The heterojunction increases breakdown voltage and minimizes leak-

age current between junctions. Cancellation of emitter junction non-linearities

results in higher suppression of intermodulation products. Only a single positive

supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke

are required for operation.



IP3=34.0dBm at 1950MHz



=13.3dBm at -45dBc

OUT

ACP IS-95 1950MHz



Robust 1000V ESD, Class 1C

Operates From Single Supply

Patented Thermal Design

Optimum Technology

Applications

Matching® Applied

Gain & Return Loss

GaAs HBT



PA Driver Amplifier

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

 Cellular, PCS, GSM, UMTS

S21





IF Amplifier



Wireless Data, Satellite

Terminals

-5

-10

-15

-20

-25

-30

S11

Si BJT

S22

GaN HEMT

InP HBT

0.5

1.5

2.5

3.5

4.5

5.5

Frequency (GHz)

RF MEMS

LDMOS

Specification

Parameter

Unit

Condition

Min.

17.5

15.7

Typ.

19.0

17.2

19.5

36.9

34.0

13.3

5000

13.0

19.0

4.5

Max.

20.5

18.7

Small Signal Gain

850MHz

1950MHz

850MHz

1950MHz

850MHz

1950MHz

Output Power at 1dB Compression

Output Third Order Intercept Point

dBm

MHz

32.0

Output Power

1950MHz, -45dBc ACP IS-95 9 Forward Channels

Return Loss >10dB

1950MHz

Bandwidth

Input Return Loss

Output Return Loss

Noise Figure

Device Operating Voltage

Device Operating Current

11.0

14.0

1950MHz

5.5

5.3

4.7

4.9

Thermal Resistance (junction to lead)

102

°C/W

Test Conditions: V =8V, I =80mA Typ., OIP Tone Spacing=1MHz, P

per tone=0dBm, R

=39, T =25°C, Z =Z =50

BIAS L S L

OUT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS110722

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