Datasheet > SBA449001

SBA449001

更新时间： 2024-12-01 18:04:47

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
4页	279K
描述
PNP Transistor Array with Base Resistors

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SBA449001 数据手册

SBA449001

SBA449001A

SENSITRON________ _

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 5585, REV. -

PNP Transistor Array with Base Resistors

 Quad PNP transistors in Ceramic LCC-20 package

 Each transistor equivalent to 2N2907

 Alternate base resistors available (contact factory for options)

 External connection option for base resistor flexibility and full testability

MAX. RATINGS FOR TRANSISTOR

RATING

All rating at are T_A= 25^OC unless otherwise specified

CONDITIONS

MIN.

TYP.

MAX.

UNITS

-60

Vdc

Collector-Emitter Voltage (V_CEO

Collector-Base Voltage (V_CBO

Emitter-Base Voltage (V_EBO

)

-60

-5.0

-0.6

Vdc

Adc

)

Collector Current-Continuous (I_C)

(subject to Ceramic Tc < 65C)

625

mW/C

Total Power Dissipation P_T@ T_C= 25C;

Derate above 25 C

200

Thermal Resistance, Junction to Case (R_JC

Per Transistor

Operating Junction

and Storage Temp. (T_J& T_stg)

)

C/W

C

-65

+150

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

All rating at are T_A= 25^OC unless otherwise specified

Collector to Base Cutoff current I_CBO1

-10

µA

V_CB= -60V

V_EB= -5V

I_C= -10mA

Collector current, Emitter to Base I_EBO1

-60

Breakdown Voltage, Collector to Emitter

V_(BR)CEO

-50

-10

-50

-10

µA

Collector to Emitter cutoff current I_CES

Collector to Base cutoff current I_CBO2

Emitter to Base cutoff current I_EBO2

Collector to Base Cutoff current I_CBO3

V_CE= -50V

V_CB= -50V

V_EB= -4V

V_CB= -50V, T_A= 150⁰C

12 3 4

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