Datasheet > SBA4086ZSR

SBA4086ZSR

更新时间： 2024-12-01 01:10:39

品牌	Logo	应用领域
威讯 - RFMD		放大器射频微波
页数	文件大小	规格书
6页	596K
描述
DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER

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SBA4086ZSR 数据手册

SBA4086Z

DCto5GHz, CASCADABLE InGaP/GaAs HBT

MMIC AMPLIFIER

Package: SOT-86

Product Description

Features

RFMD’s SBA4086Z is a high performance InGaP/GaAs Heterojunction

Bipolar Transistor MMIC Amplifier. A Darlington configuration designed

with InGaP process technology provides broadband performance up to

5GHz with excellent thermal performance. The heterojunction increases

breakdown voltage and minimizes leakage current between junctions.

Cancellation of emitter junction non-linearities results in higher suppres-

sion of intermodulation products. Only a single positive supply voltage, DC-

blocking capacitors, a bias resistor, and an optional RF choke are required



IP3=33.5dBm at 1950MHz



=12.3dBm at -45dBc

OUT

ACP IS-95 1950MHz



Robust 1000V ESD, Class 1C

Operates From Single Supply

Patented Thermal Design

for operation.

Optimum Technology

Applications

Matching® Applied

GaAs HBT

Gain and Return Loss vs Frequency



PA Driver Amplifier

GaAs MESFET

 Cellular, PCS, GSM, UMTS

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS



S21



IF Amplifier



Wireless Data, Satellite

Terminals

-5

s22

-10

-15

-20

-25

-30

-35

-40

Si BJT

GaN HEMT

InP HBT

s11

RF MEMS

LDMOS

Frequency (GHz)

Specification

Parameter

Unit

Condition

Min.

13.3

12.7

Typ.

14.8

14.2

19.1

19.0

36.5

33.5

12.3

5000

21.0

20.5

4.8

Max.

16.3

15.7

Small Signal Gain

850MHz

1950MHz

850MHz

1950MHz

850MHz

1950MHz

Output Power at 1dB Compression

Output Third Order Intercept Point

dBm

MHz

17.5

31.5

Output Power

1950MHz, -45dBc ACP IS-95 9 Forward Channels

Return Loss>10dB

1950MHz

Bandwidth

Input Return Loss

Output Return Loss

Noise Figure

Device Operating Voltage

Device Operating Current

Thermal Resistance (junction to lead)

14.0

1950MHz

5.8

5.4

4.6

5.0

102

°C/W

Test Conditions: V =8V, I =80mA Typ., OIP Tone Spacing=1MHz, P

per tone=0dBm, R

=39, T =25°C, Z =Z =50

OUT

BIAS

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS110708

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与SBA4086ZSR相关器件

型号	品牌	获取价格	描述	数据表
SBA-4089	SIRENZA	获取价格	DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
SBA-4089Z	SIRENZA	获取价格	DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
SBA449001	SENSITRON	获取价格	PNP Transistor Array with Base Resistors
SBA449001A	SENSITRON	获取价格	PNP Transistor Array with Base Resistors
SBA449102	SENSITRON	获取价格	NPN Transistor Array with Base Resistors
SBA449102A	SENSITRON	获取价格	NPN Transistor Array with Base Resistors
SBA50-04J	SANYO	获取价格	40V, 5A Rectifier
SBA50-04Y	SANYO	获取价格	40V, 5A Rectifier
SBA50-09J	SANYO	获取价格	90V, 5A Rectifier
SBA50-09Y	SANYO	获取价格	90V, 5A Rectifier

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