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SB890 PDF预览

SB890

更新时间: 2024-10-30 14:52:15
品牌 Logo 应用领域
森美特 - SUNMATE /
页数 文件大小 规格书
2页 126K
描述
Rectifier device Schottky Diode

SB890 数据手册

 浏览型号SB890的Datasheet PDF文件第2页 
SB820 - SB8100  
SCHOTTKY BARRIER RECTIFIER DIODES  
VOLTAGE RANGE: 20 - 100V  
CURRENT: 8 .0 A  
Features  
!
Schottky Barrier Chip  
!
!
!
!
!
Guard Ring for Transient Protection  
High Current Capability, Low Forward  
Low Reverse Leakage Current  
B
TO-220AC  
C
Dim  
A
B
C
D
E
Min  
14.9  
Max  
15.1  
10.5  
2.87  
4.06  
14.22  
0.94  
3.91 Ø  
6.86  
4.70  
2.79  
0.64  
1.40  
5.20  
High Surge Current Capability  
G
A
Plastic Material has UL Flammability  
Classification 94V-O  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
2.62  
3.56  
13.46  
0.68  
3.74 Ø  
5.84  
4.44  
2.54  
0.35  
1.14  
4.95  
PIN1  
2
D
F
G
H
I
Mechanical Data  
F
E
!
!
Case: TO-220AC Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 2.24 grams (approx.)  
Mounting Position: Any  
P
J
K
L
I
L
J
P
!
!
!
!
H
All Dimensions in mm  
PIN 1 +  
PIN 2 -  
+
Marking: Type Number  
Case  
K
TA = 25C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Characteristic  
Symbol  
SB820 SB830 SB840 SB845 SB850 SB860 SB870 SB880 SB890 SB8100  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
20  
14  
20  
30  
21  
30  
40  
28  
40  
45  
32  
45  
50  
35  
50  
60  
42  
60  
70  
49  
70  
80  
56  
80  
90  
63  
90  
100  
70  
VRRM  
VRMS  
VDC  
V
V
100  
Maximum DC blocking voltage  
Maximum average forward rectified current  
(see fig.1)  
I(AV)  
8.0  
A
A
Peak forward surge current  
IFSM  
150.0  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
VF  
IR  
0.65  
0.75  
0.85  
V
Maximum instantaneous forward voltage at 8.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
1.0  
mA  
TA=100 C  
15.0  
300  
50.0  
250  
Typical junction capacitance (NOTE 1)  
CJ  
pF  
C/W  
C
Typical thermal resistance (NOTE 2)  
Operating junction temperature range  
RθJC  
3.0  
-65 to +125  
-65 to +150  
-65 to +150  
TJ  
Storage temperature range  
C
TSTG  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2.Thermal resistance from junction to case  
1 of 2  
www.sunmate.tw  

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