SB820 - SB8100
SCHOTTKY BARRIER RECTIFIER DIODES
VOLTAGE RANGE: 20 - 100V
CURRENT: 8 .0 A
Features
!
Schottky Barrier Chip
!
!
!
!
!
Guard Ring for Transient Protection
High Current Capability, Low Forward
Low Reverse Leakage Current
B
TO-220AC
C
Dim
A
B
C
D
E
Min
14.9
—
Max
15.1
10.5
2.87
4.06
14.22
0.94
3.91 Ø
6.86
4.70
2.79
0.64
1.40
5.20
High Surge Current Capability
G
A
Plastic Material has UL Flammability
Classification 94V-O
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
2.62
3.56
13.46
0.68
3.74 Ø
5.84
4.44
2.54
0.35
1.14
4.95
PIN1
2
D
F
G
H
I
Mechanical Data
F
E
!
!
Case: TO-220AC Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
P
J
K
L
I
L
J
P
!
!
!
!
H
All Dimensions in mm
PIN 1 +
PIN 2 -
+
Marking: Type Number
Case
K
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol
SB820 SB830 SB840 SB845 SB850 SB860 SB870 SB880 SB890 SB8100
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
20
14
20
30
21
30
40
28
40
45
32
45
50
35
50
60
42
60
70
49
70
80
56
80
90
63
90
100
70
VRRM
VRMS
VDC
V
V
100
Maximum DC blocking voltage
Maximum average forward rectified current
(see fig.1)
I(AV)
8.0
A
A
Peak forward surge current
IFSM
150.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
VF
IR
0.65
0.75
0.85
V
Maximum instantaneous forward voltage at 8.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
1.0
mA
TA=100 C
15.0
300
50.0
250
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJC
3.0
-65 to +125
-65 to +150
-65 to +150
TJ
Storage temperature range
C
TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to case
1 of 2
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