SB880F-LF

更新时间： 2024-10-29 13:13:15

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
4页	50K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 80V V(RRM), Silicon, TO-220, ROHS COMPLIANT, PLASTIC, ITO-220A, 2 PIN

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中文翻译

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数据手册

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SB880F-LF 数据手册

WTE

POWER SEMICONDUCTORS

SB820 – SB8100

8.0A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring for Transient Protection

Low Forward Voltage Drop

Low Reverse Leakage Current

High Surge Current Capability

Plastic Material has UL Flammability

Classification 94V-O

TO-220A

Dim

Min

13.90

9.80

2.54

3.56

12.70

0.51

3.55 Ø

5.75

4.16

2.03

0.30

1.14

4.83

Max

15.90

10.70

3.43

PIN1

4.56

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ D

14.73

0.96

4.09 Ø

6.85

Mechanical Data

Case: TO-220A, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Weight: 2.24 grams (approx.)

5.00

2.92

0.65

1.40

5.33

Mounting Position: Any

All Dimensions in mm

Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1 +

PIN 3 -

Case

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

820

830

840

845

850

860

880

Characteristic

Symbol

Unit

8100

100

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_C= 95°C

8.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

FSM

150

Forward Voltage

@I_F= 8.0A

V^FM

I^RM

0.55

0.75

0.85

Peak Reverse Current

@T_A= 25°C

0.5

At Rated DC Blocking Voltage @T_A= 100°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

C^j

700

3.0

°C/W

°C

R^ꢀ^JC

Operating and Storage Temperature Range

T^j, T^STG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB820 – SB8100

1 of 4

12 3 4

中文翻译

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