WTE
POWER SEMICONDUCTORS
Pb
SB820DC – SB8100DC
8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Features
ꢀ
Schottky Barrier Chip
C
ꢀ
Guard Ring Die Construction for
Transient Protection
A
J
ꢀ
ꢀ
ꢀ
ꢀ
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
B
D
E
PIN 1
2
3
G
H
K
P
P
D2 PAK/TO-263
Min
Mechanical Data
ꢀ
Dim
Max
10.40
10.60
4.80
9.10
—
Case: D2PAK/TO-263, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
A
B
C
D
E
G
H
J
9.80
ꢀ
9.60
4.40
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1
PIN 3
8.50
Case, PIN 2
2.80
1.00
1.40
0.90
1.40
0.70
2.75
—
1.20
K
P
0.30
2.35
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
SB
SB
SB
SB
SB
SB
SB
SB
Characteristic
Symbol
Unit
820DC 830DC 840DC 845DC 850DC 860DC 880DC 8100DC
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
14
30
21
40
28
45
32
50
35
60
42
80
56
100
70
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current @TC = 130°C
8.0
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
150
A
Forward Voltage
@IF = 4.0A
VFM
IRM
0.55
0.75
0.85
V
Peak Reverse Current
@TA = 25°C
0.5
50
mA
At Rated DC Blocking Voltage @TA = 100°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Cj
400
3.0
pF
°C/W
°C
RθJC
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on minimum recommended pad size on FR-4 board.
SB820DC – SB8100DC
1 of 4
© 2006 Won-Top Electronics