®
SB820DC – SB8100DC
8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
WON-TOP ELECTRONICS
Pb
Features
Low Forward Voltage
C
Epitaxial Construction with Oxide Passivation
Guard Ring for Transient and ESD Protection
Surge Overload Rating to 150A Peak
Low Power Loss, High Efficiency
Fast Switching
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Switching
Power Supplies
A
J
B
D
E
PIN 1
2
3
G
H
K
P
P
D2 PAK/TO-263
Mechanical Data
Dim
A
Min
9.80
9.60
4.40
8.50
—
Max
10.40
10.60
4.80
9.10
2.80
1.40
0.99
1.40
0.70
2.75
Case: D2PAK/TO-263, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
B
C
D
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1
PIN 3
E
Case, PIN 2
G
H
1.00
—
J
1.20
0.30
2.35
K
P
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
SB
SB
SB
SB
SB
SB
SB
SB
Characteristic
Symbol
Unit
820DC 830DC 840DC 845DC 850DC 860DC 880DC 8100DC
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
14
30
21
40
28
45
32
50
35
60
42
80
56
100
70
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
@TC = 100°C
Total Device
Per Diode
8.0
4.0
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
IFSM
150
A
Forward Voltage per diode
@IF = 4.0A
VFM
IRM
CJ
0.55
450
0.75
0.85
V
mA
pF
Peak Reverse Current
At Rated DC Blocking Voltage
@TJ = 25°C
@TJ = 100°C
0.2
20
Typical Junction Capacitance (Note 1)
350
Thermal Resistance Junction to Ambient (Note 2)
Thermal Resistance Junction to Case (Note 2)
RθJA
RθJC
60
3.0
°C/W
°C
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on FR-4 PCB with minimum recommended pad layout per diode.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1