SB880D-T3-LF

更新时间： 2024-10-29 13:01:07

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
4页	48K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 80V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3

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中文翻译

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SB880D-T3-LF 数据手册

WTE

POWER SEMICONDUCTORS

SB820D – SB8100D

8.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

PIN 1

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ K

D²PAK/TO-263

Min

Mechanical Data

Dim

Max

10.40

10.60

4.80

9.10

—

Case: D²PAK/TO-263, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

9.80

9.60

4.40

Polarity: See Diagram

Weight: 1.7 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1 +

PIN 3 -

8.50

Case

2.80

1.00

1.40

0.90

1.40

0.70

2.75

—

1.20

0.30

2.35

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

820D 830D 840D 845D 850D 860D 880D 8100D

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_C= 100°C

8.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

I^FSM

150

Forward Voltage

@I_F= 8.0A

V^FM

I^RM

0.55

0.75

0.85

Peak Reverse Current

@T_A= 25°C

0.5

At Rated DC Blocking Voltage @T_A= 100°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

C^j

400

3.0

°C/W

°C

R^ꢀ^JC

Operating and Storage Temperature Range

T^j, T^STG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB820D – SB8100D

1 of 4

12 3 4

中文翻译

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与SB880D-T3-LF相关器件

型号	品牌	获取价格	描述	数据表
SB880-E	LRC	获取价格	Schottky Barrier Rectifiers Reverse Voltage 20 to 100V
SB880F	WTE	获取价格	8.0A ISOLATION SCHOTTKY BARRIER RECTIFIER
SB880F	TRSYS	获取价格	ISOLATION SCHOTTKY BARRIER RECTIFIERS
SB880F	PACELEADER	获取价格	ISOLATION SCHOTTKY BARRIER RECTIFIER
SB880F	WON-TOP	获取价格	Powerpack
SB880FCT	WTE	获取价格	8.0A DUAL SCHOTTKY BARRIER RECTIFIER
SB880FCT	PANJIT	获取价格	ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 8 Ampere)
SB880FCT	PACELEADER	获取价格	ISOLATION SCHOTTKY BARRIER RECTIFIER
SB880FCT	WON-TOP	获取价格	Powerpack
SB880FCT-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 80V V(RRM), Silicon, TO-220AB, ROHS COM

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