Datasheet > SB85

SB85

更新时间： 2024-09-15 22:43:27

品牌	Logo	应用领域
SSE		二极管
页数	文件大小	规格书
1页	19K
描述
SILICON SCHOTTKY DETECTING DIODE

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中文翻译

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数据手册

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SB85 数据手册

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

SB85

SILICON SCHOTTKY

DETECTING DIODE

TECHNICAL

SPECIFICATION

REVERSE VOLTAGE: 50V

FORWARD CURRENT: 150mA

FEATURES

• Small glass structure ensures high reliability

DO - 34

DO - 35

• Fast switching

• Low leakage

• High temperature soldering guaranteed:

1.0 (25.4)

MIN.

1.0 (25.4)

MIN.

250^oC/10S/9.5mm lead length

at 5 lbs tension

.060 (1.5)

.090 (2.3)

.050 (1.27)

.075 (1.91)

DIA.

.120 (3.0)

.200 (5.1)

.085 (2.2)

.120 (3.0)

MECHANICAL DATA

• Terminal: Plated axial leads solderable per

1.0 (25.4)

MIN.

1.0 (25.4)

MIN.

MIL-STD 202E, method 208C

.018 (0.46)

.022 (0.56)

.018 (0.46)

.022 (0.56)

DIA.

• Case: Glass,hermetically sealed

• Polarity: Color band denotes cathode

• Mounting position: Any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND CHARACTERISTICS

(Ratings at 25^oC ambient temperature unless otherwise specified)

VALUE

RATINGS

SYMBOL

UNITS

Typ.

Max.

V_R

I_FM

I_F

Reverse Voltage

150

Forward Current (peak)

Forward Current (D.C.)

0.4

0.8

I_F=10mA

V_F1

V_F2

I_R

Forward Voltage (D.C.)

I_F=100mA

Reverse Current (V_R=30V)

Capacitance

µA

(Note 1)

(Note 2)

60%

Detection Effectiveness

Operating Junction and Storage

^oC

T_J,T_STG

-55 +125

Temperature Range

Notes:

1. VR=10V, f=1MHz

2. Vm=3V(peak), f=30MHz, RL=3.9KΩ, Ct=10pF.

http://www.sse-diode.com

中文翻译

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